公开(公告)号：US20240179910A1

公开(公告)日：2024-05-30

申请号：US18355718

申请日：2023-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Hyoung Kim ,  Ji Won Kim ,  Ah Reum Lee ,  Suk Kang Sung

IPC: H10B43/27 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

CPC classification number: H10B43/27 ,  H01L24/08 ,  H01L25/0657 ,  H01L25/18 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A semiconductor memory device includes a cell substrate including a first surface and a second surface opposite to the first surface, a first mold stack including a plurality of first gate electrodes sequentially stacked on the first surface, a second mold stack including a plurality of second gate electrodes sequentially stacked on the first mold stack, a first channel structure extending in a first direction with respect to the first surface and crossing the plurality of first gate electrodes and the plurality of second gate electrodes, and an input/output pad on the second surface, wherein the first mold stack includes a mold opening that exposes a portion of the second mold stack, and at least a portion of the input/output pad overlaps the mold opening in the first direction.