公开(公告)号：US20230147882A1

公开(公告)日：2023-05-11

申请号：US17984097

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongin Lee ,  Bokyoung Kim

IPC: G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/0631 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0604

Abstract: A memory system includes a memory controller configured to control a memory device and sub-buffer memory arranged outside the memory controller. The memory controller includes a processor configured to control a memory operation for the memory device, main buffer memory that is different from the sub-buffer memory and arranged in the memory controller, and a buffer allocation circuit configured to control an allocation ratio between the sub-buffer memory and the main buffer memory. The processor sets an operation mode of the buffer allocation circuit as an operation in which the allocation ratio is fixed.

公开(公告)号：US12265727B2

公开(公告)日：2025-04-01

申请号：US17984097

申请日：2022-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin Lee ,  Bokyoung Kim

IPC: G06F3/06

Abstract: A memory system includes a memory controller configured to control a memory device and sub-buffer memory arranged outside the memory controller. The memory controller includes a processor configured to control a memory operation for the memory device, main buffer memory that is different from the sub-buffer memory and arranged in the memory controller, and a buffer allocation circuit configured to control an allocation ratio between the sub-buffer memory and the main buffer memory. The processor sets an operation mode of the buffer allocation circuit as an operation in which the allocation ratio is fixed.

公开(公告)号：US11984536B2

公开(公告)日：2024-05-14

申请号：US17308345

申请日：2021-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun Kim ,  Yongmin Kim ,  Sungwon Ko ,  Bokyoung Kim ,  Jinhwan Kim ,  Wongoo Hur

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/382 ,  H01L33/46 ,  H01L33/62 ,  H01L33/32 ,  H01L33/42

Abstract: A semiconductor light emitting device includes a first electrode layer, a light emitting structure on the first electrode layer, a transparent electrode layer between the first electrode layer and the light emitting structure, an interlayer insulating layer between the transparent electrode layer and the first electrode layer, and having first and second openings, a second electrode layer between the first electrode layer and the interlayer insulating layer, and connected to the transparent electrode layer, and an electrode pad contacting the second electrode layer, each of the first openings and at least one of the second openings define one group to have at least first and second groups, the first group being closer to the electrode pad than the second group is, and a distance between the first and second openings in the first group being greater than a distance between the first and second openings in the second group.

公开(公告)号：US11888091B2

公开(公告)日：2024-01-30

申请号：US17135686

申请日：2020-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun Kim ,  Sungwon Ko ,  Bokyoung Kim ,  Jinhwan Kim ,  Wongoo Hur

IPC: H01L33/38 ,  H01L33/56 ,  H01L33/64 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/405 ,  H01L33/56 ,  H01L33/644

Abstract: A semiconductor light emitting device includes a substrate structure, first and second regions and a main region; a light emitting structure, first and second electrode layers, an interlayer insulating layer, and a pad electrode layer. The light emitting structure is provided on the third region. The first electrode layer is provided between the substrate structure and the light emitting structure, and has a first electrode extension that extends into the first region. The second electrode layer is provided between the first electrode layer and the light emitting structure, and has a second electrode extension that extends into the second region. The interlayer insulating layer is provided between the first and second electrode layers, and has an opening exposing a portion of the first electrode extension. The pad electrode layer is provided on the interlayer insulating layer, and is connected to the portion of the first electrode extension through the opening.

公开(公告)号：US20210367108A1

公开(公告)日：2021-11-25

申请号：US17135686

申请日：2020-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun Kim ,  Sungwon Ko ,  Bokyoung Kim ,  Jinhwan Kim ,  Wongoo Hur

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/64 ,  H01L33/56

Abstract: A semiconductor light emitting device includes a substrate structure, first and second regions and a main region; a light emitting structure, first and second electrode layers, an interlayer insulating layer, and a pad electrode layer. The light emitting structure is provided on the third region. The first electrode layer is provided between the substrate structure and the light emitting structure, and has a first electrode extension that extends into the first region. The second electrode layer is provided between the first electrode layer and the light emitting structure, and has a second electrode extension that extends into the second region. The interlayer insulating layer is provided between the first and second electrode layers, and has an opening exposing a portion of the first electrode extension. The pad electrode layer is provided on the interlayer insulating layer, and is connected to the portion of the first electrode extension through the opening.