SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20140042509A1

    公开(公告)日:2014-02-13

    申请号:US14057079

    申请日:2013-10-18

    Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device may include a substrate provided with a transistor, an insulating layer disposed on the substrate, the insulating layer including a contact hole exposing a portion of the transistor, a spacer disposed on an inner sidewall of the contact hole, and a contact plug disposed in the contact hole. Here, a space defined by the spacer may increase in width from a bottom side thereof to a top side thereof.

    Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括设置有晶体管的衬底,设置在衬底上的绝缘层,绝缘层包括暴露晶体管的一部分的接触孔,设置在接触孔的内侧壁上的间隔件和接触插塞 设置在接触孔中。 这里,由间隔件限定的空间的宽度可以从其底侧增加到其顶侧。

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