公开(公告)号：US20210352776A1

公开(公告)日：2021-11-11

申请号：US17315021

申请日：2021-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun LEE ,  Seunghee CHO

IPC: H05B6/64 ,  F24C15/20 ,  F24C15/00

Abstract: Provided is a cooking appliance including a grille frame with a filter fixing structure. The cooking appliance includes: a cabinet; a hood flow path formed inside the cabinet; a blower positioned in the cabinet to form an air flow inside the hood flow path; a filter positioned on the hood flow path to filter the air flow supplied from the blower; and a grille frame including an outlet discharging filtered air to an outside of the cabinet, and forming a plurality of support spaces, wherein a lower end of the filter is inserted in and supported by one support space of the plurality of support spaces.

公开(公告)号：US20190341401A1

公开(公告)日：2019-11-07

申请号：US16516793

申请日：2019-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungkeun SON ,  Yoocheol SHIN ,  Changhyun LEE ,  Hyunjung KIM ,  Chung-lI HYUN

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/11519 ,  H01L27/11565

Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.

公开(公告)号：US20150061545A1

公开(公告)日：2015-03-05

申请号：US14475891

申请日：2014-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeyoung LEE ,  Daedong KIM ,  Dusan BAEK ,  Changhyun LEE ,  Jaeho JUNG ,  Yangwook KIM ,  Haein CHUN

IPC: H05B37/02 ,  H05B33/08

CPC classification number: H05B37/0272 ,  H05B33/0854 ,  H05B37/0236 ,  H05B37/0281 ,  Y02B20/42

Abstract: A lighting control method and an electronic device using the same are provided. The method includes receiving pattern information for controlling lighting, generating lighting control information including brightness level information corresponding to operation time information based on the received pattern information, and transmitting the lighting control information.

Abstract translation: 提供照明控制方法和使用其的电子装置。 该方法包括接收用于控制照明的图案信息，基于接收到的图案信息生成包括与操作时间信息对应的亮度级信息的点亮控制信息，以及发送照明控制信息。

公开(公告)号：US20240060652A1

公开(公告)日：2024-02-22

申请号：US18386010

申请日：2023-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhyun LEE ,  Yesil SEO

IPC: F24C15/08 ,  F24C15/00 ,  F24C15/20

CPC classification number: F24C15/08 ,  F24C15/006 ,  F24C15/20

Abstract: A cooking equipment including a main body, and a controller mounted to the front of the main body. The controller includes a case, a bracket panel inside the case and accommodating a circuit board, and a guide panel detachably coupled, inside the case, to the bracket panel and the front surface of the main body. The guide panel includes a guide rib to guide a tool to enter the case to couple the guide panel to the bracket panel and the front surface of the main body or to detach the guide panel from the bracket panel and the front surface of the main body.

公开(公告)号：US20230093325A1

公开(公告)日：2023-03-23

申请号：US17993879

申请日：2022-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhyun LEE ,  Chulwoo LEE ,  Seunghee CHO

IPC: H05B6/64 ,  F24C15/20 ,  F24C15/14

Abstract: Disclosed herein is a cooking apparatus having an improved drainage structure. The cooking apparatus includes a main body having a cooking chamber with an opening provided to be opened forward, and a door coupled to the main body so as to open and close the cooking chamber. The door includes a door frame, a cover glass arranged on a front surface of the door frame, a touch panel arranged between the cover glass and the front surface of the door frame and provided to be in close contact with the front surface of the door frame by being pressed by the cover glass, and a drain hole arranged at a region, corresponding to a lower end of the touch panel, of the front surface of the door frame, and provided to allow a front surface and a rear surface of the door frame to communicate with each other.

公开(公告)号：US20180219022A1

公开(公告)日：2018-08-02

申请号：US15935498

申请日：2018-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungkeun SON ,  Yoocheol SHIN ,  Changhyun LEE ,  Hyunjung KIM ,  Chung-II HYUN

IPC: H01L27/11582 ,  H01L21/28 ,  H01L27/1157 ,  H01L27/11565

CPC classification number: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/40117

Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.

公开(公告)号：US20140065810A1

公开(公告)日：2014-03-06

申请号：US14074817

申请日：2013-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungkeun SON ,  Changhyun LEE ,  Jaegoo LEE ,  Kwang Soo SEOL ,  Byungkwan YOU

IPC: H01L29/66

CPC classification number: H01L29/66833 ,  H01L27/11582 ,  H01L29/7926

Abstract: A nonvolatile memory device and a method of forming the same, the device including a semiconductor substrate; a plurality of gate patterns stacked on the semiconductor substrate; inter-gate dielectric patterns between the gate patterns; active pillars sequentially penetrating the gate patterns and the inter-gate dielectric patterns to contact the semiconductor substrate; and a gate insulating layer between the active pillars and the gate patterns, wherein corners of the gate patterns adjacent to the active pillars are rounded.

Abstract translation: 非易失性存储器件及其形成方法，所述器件包括半导体衬底; 堆叠在所述半导体衬底上的多个栅极图案; 栅极图案之间的栅极间电介质图案; 依次穿过栅极图案和栅极间电介质图案以接触半导体衬底的有源支柱; 以及在活性柱和栅极图案之间的栅极绝缘层，其中与活性柱相邻的栅极图案的角部是圆形的。

公开(公告)号：US20200212063A1

公开(公告)日：2020-07-02

申请号：US16811171

申请日：2020-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungkeun SON ,  Yoocheol SHIN ,  Changhyun LEE ,  Hyunjung KIM ,  Chung-Il HYUN

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11524 ,  H01L21/28 ,  H01L27/11519 ,  H01L27/11556

Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.

公开(公告)号：US20170186758A1

公开(公告)日：2017-06-29

申请号：US15458273

申请日：2017-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun LEE ,  Dohyun LEE ,  Youngwoo PARK ,  Su Jin AHN ,  Jaeduk LEE

IPC: H01L27/11524 ,  G11C16/34 ,  G11C16/10 ,  H01L27/11582 ,  H01L27/11529 ,  H01L27/11573 ,  H01L27/11556 ,  G11C16/04 ,  H01L27/1157

CPC classification number: H01L27/11524 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3459 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/16

Abstract: Disclosed is a three-dimensional semiconductor memory device, comprising a cell array formed on a first substrate and a peripheral circuit formed on a second substrate that is at least partially overlapped by the first substrate, wherein the peripheral circuit is configured to provide signals for controlling the cell array. The cell array comprises insulating patterns and gate patterns stacked alternately on the first substrate, and at least a first pillar formed in a direction perpendicular to the first substrate and being in contact with the first substrate through the insulating patterns and the gate patterns. The three-dimensional semiconductor memory device further comprising a first ground selection transistor that includes a first gate pattern, adjacent to the first substrate and the first pillar, and a second ground selection transistor that includes a second gate pattern positioned on the first gate pattern and the first pillar, and wherein the first ground selection transistor is not programmable, and the second ground selection transistor is programmable.

公开(公告)号：US20130100742A1

公开(公告)日：2013-04-25

申请号：US13653798

申请日：2012-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun LEE ,  Yoocheol SHIN ,  Jungdal CHOI

IPC: G11C11/34

CPC classification number: G11C11/34 ,  G11C5/02 ,  G11C5/025 ,  G11C5/06 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418

Abstract: A nonvolatile memory device is provided. The device may include a plurality of cell strings that are configured to share a bit line, word lines, and selection lines. Each of the cell strings may include a plurality of memory cells connected in series to each other and a string selection device controlling connections between the memory cells and the bit line, and the string selection device may include a first string selection element with a first threshold voltage and a second string selection element connected in series to the first string selection element and having a second threshold voltage different from the first threshold voltage. At least one of the first and second string selection elements may include a plurality of switching elements connected in series to each other.

Abstract translation: 提供非易失性存储器件。 该设备可以包括被配置为共享位线，字线和选择线的多个单元串。 每个单元串可以包括彼此串联连接的多个存储器单元和用于控制存储器单元和位线之间的连接的串选择设备，并且串选择设备可以包括具有第一阈值的第一串选择单元 电压和第二串选择元件串联连接到第一串选择元件并且具有不同于第一阈值电压的第二阈值电压。 第一和第二串选择元件中的至少一个可以包括彼此串联连接的多个开关元件。