公开(公告)号：US20250151426A1

公开(公告)日：2025-05-08

申请号：US18782845

申请日：2024-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changkyu Lee ,  Jinyoung Kim ,  Byoungho Kwon ,  Jihun Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a unit pixel region in the substrate, the unit pixel region including a photoelectric conversion region, a pixel isolation structure defining the unit pixel region, a first insulation layer on a front-side surface of the substrate, and a dual transfer gate electrode including a first sub transfer gate electrode and a second sub transfer gate electrode adjacent to each other in a horizontal direction each passing through the first insulation layer and buried in the substrate, in the unit pixel region, wherein a lower surface of each of the first and the second sub transfer gate electrode is disposed at a lower vertical level than an upper surface of the first insulation layer, and at a higher or equal vertical level than a lower surface of the first insulation layer.

公开(公告)号：US20250142994A1

公开(公告)日：2025-05-01

申请号：US18750406

申请日：2024-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juhyeon BAEK ,  Dongchan Kim ,  Beomsuk Lee ,  Byoungho Kwon ,  Changkyu Lee ,  Hwiyoung Jeon

IPC: H01L27/146

Abstract: An image sensor includes unit pixels respectively including photodiodes in a substrate having frontside and backside surfaces, a sensor array area including at least one isolation structure configured to isolate the unit pixels from each other and vertically penetrating the substrate, and a capacitor area arranged adjacent to the sensor array area in a horizontal direction parallel to the backside surface of the substrate and including at least one capacitor on the frontside surface of the substrate and at least one dummy isolation structure located adjacent to the at least one capacitor to vertically penetrate the substrate, wherein one end surface of each of the at least one capacitor and the at least one dummy isolation structure is coplanar with the backside surface of the substrate, and the at least one isolation structure and the at least one dummy isolation structure include a same material.

公开(公告)号：US20250151441A1

公开(公告)日：2025-05-08

申请号：US18809676

申请日：2024-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changkyu Lee ,  Jinyoung Kim ,  Byoungho Kwon ,  Dhami Park ,  Jihun Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a first pixel disposed in the substrate, the first pixel including a first photoelectric conversion region, a second pixel disposed adjacent to the first pixel in the substrate, the second pixel including a second photoelectric conversion region, a first floating diffusion region in the first pixel, a second floating diffusion region in the second pixel, an insulation layer on the substrate, and a first buried connect penetrating the insulation layer and connected to the first floating diffusion region and the second floating diffusion region, wherein the first buried connect includes an upper surface and a lower surface, the upper surface of the first buried connect is at a higher vertical level than an upper surface of the insulation layer, and the lower surface of the first buried connect is at a higher or equal vertical level than a lower surface of the insulation layer.

公开(公告)号：US20220165763A1

公开(公告)日：2022-05-26

申请号：US17534706

申请日：2021-11-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bokwon KIM ,  Changkyu Lee ,  Kwangmin LEE ,  Minhwan JEON ,  Jonguk KIM ,  Minsung HEO

IPC: H01L27/146

Abstract: An image sensor includes a first pixel; a second pixel disposed adjacent to the first pixel; a pixel isolation structure disposed between the first pixel and the second pixel; a rear side anti-reflective layer disposed on the first pixel, the second pixel, and the pixel isolation structure; and a fence disposed on the rear side anti-reflective layer aligning with the pixel isolation structure and including a buried air gap.