中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

67 records (took 0.023 seconds)

    IMAGE SENSORS AND ELECTRONIC DEVICES
    2.
    发明公开
    IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20230299115A1

    公开(公告)日：2023-09-21

    申请号：US18186402

    申请日：2023-03-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Sung Young Yun ,  Sung Jun Park ,  Feifei Fang ,  Chul Joon Heo

    IPC: H01L27/146 ,  H01L31/0352

    CPC classification number: H01L27/14647 ,  H01L31/035209

    Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    6.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开

    公开(公告)号：US20190157594A1

    公开(公告)日：2019-05-23

    申请号：US16258952

    申请日：2019-01-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Takkyun RO ,  Kyung Bae Park ,  Ryuichi Satoh ,  Yong Wan Jin ,  Chul Joon Heo

    IPC: H01L51/44 ,  H01L51/50 ,  H01L51/00 ,  H01L51/42 ,  H01L27/30

    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

    Organic photoelectronic device and image sensor
    7.
    发明授权
    Organic photoelectronic device and image sensor 有权

    公开(公告)号：US10236461B2

    公开(公告)日：2019-03-19

    申请号：US15362964

    申请日：2016-11-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Takkyun Ro ,  Kyung Bae Park ,  Ryuichi Satoh ,  Yong Wan Jin ,  Chul Joon Heo

    IPC: H01L51/44 ,  H01L27/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50

    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

    Optoelectronic diodes and electronic devices including same
    10.
    发明授权
    Optoelectronic diodes and electronic devices including same 有权

    公开(公告)号：US10115919B2

    公开(公告)日：2018-10-30

    申请号：US15478687

    申请日：2017-04-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Gae Hwang Lee ,  Takkyun Ro ,  Yong Wan Jin ,  Chul Joon Heo

    IPC: H01L51/42 ,  H01L51/44 ,  H01L27/30 ,  H01L51/00

    Abstract: An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.

Patent Agency Ranking