公开(公告)号：US20240040774A1

公开(公告)日：2024-02-01

申请号：US18341921

申请日：2023-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euna Kim ,  Eunjung Kim

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/315 ,  H10B12/34 ,  H10B12/02

Abstract: An integrated circuit device includes a substrate and a plurality of cell patterns that have a pillar shape, wherein the plurality of cell patterns comprise a plurality of first cell groups that are arranged along a first horizontal direction and each comprise a plurality of first cell patterns arranged in a row along a second horizontal direction, and a plurality of second cell groups that are spaced apart from the plurality of first cell groups, are arranged along the first horizontal direction, and each comprise a plurality of second cell patterns arranged in a row along the second horizontal direction, and wherein respective side surfaces of the plurality of second cell patterns have respective concave portions that are recessed inward along respective side surfaces of the plurality of first cell patterns that are adjacent to respective ones of the plurality of second cell patterns.

公开(公告)号：US11616066B2

公开(公告)日：2023-03-28

申请号：US17384347

申请日：2021-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosub Kim ,  Keunnam Kim ,  Dongoh Kim ,  Bongsoo Kim ,  Euna Kim ,  Chansic Yoon ,  Kiseok Lee ,  Hyeonok Jung ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L23/528

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

公开(公告)号：US11088143B2

公开(公告)日：2021-08-10

申请号：US16896470

申请日：2020-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosub Kim ,  Keunnam Kim ,  Dongoh Kim ,  Bongsoo Kim ,  Euna Kim ,  Chansic Yoon ,  Kiseok Lee ,  Hyeonok Jung ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L23/528

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

公开(公告)号：US11917815B2

公开(公告)日：2024-02-27

申请号：US18123736

申请日：2023-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosub Kim ,  Keunnam Kim ,  Dongoh Kim ,  Bongsoo Kim ,  Euna Kim ,  Chansic Yoon ,  Kiseok Lee ,  Hyeonok Jung ,  Sunghee Han ,  Yoosang Hwang

IPC: H10B12/00 ,  H01L27/108 ,  H01L23/528

CPC classification number: H10B12/315 ,  H01L23/5283 ,  H10B12/053 ,  H10B12/34 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

公开(公告)号：US20230232618A1

公开(公告)日：2023-07-20

申请号：US18123736

申请日：2023-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosub Kim ,  Keunnam Kim ,  Dongoh Kim ,  Bongsoo Kim ,  Euna Kim ,  Chansic Yoon ,  Kiseok Lee ,  Hyeonok Jung ,  Sunghee Han ,  Yoosang Hwang

IPC: H10B12/00

CPC classification number: H10B12/488 ,  H10B12/34 ,  H10B12/053 ,  H10B12/315 ,  H10B12/482

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

公开(公告)号：US20210066305A1

公开(公告)日：2021-03-04

申请号：US16896470

申请日：2020-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosub Kim ,  Keunnam Kim ,  Dongoh Kim ,  Bongsoo Kim ,  Euna Kim ,  Chansic Yoon ,  Kiseok Lee ,  Hyeonok Jung ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L23/528

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

公开(公告)号：US20250120073A1

公开(公告)日：2025-04-10

申请号：US18906420

申请日：2024-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghoon Bae ,  Seungbo Ko ,  Euna Kim

IPC: H10B12/00

Abstract: Provided is an integrated circuit device including a substrate having a cell array area, a peripheral circuit area surrounding the cell array area, and an interface area between the cell array area and the peripheral circuit area, a plurality of bit lines extending in a first horizontal direction on the cell array area and the interface area and placed parallel to each other in a second horizontal direction perpendicular to the first horizontal direction, insulating capping patterns extending in the first horizontal direction on the bit lines, a plurality of contact plugs vertically connected to the bit lines, respectively, in the interface area, and a plurality of contact pads disposed on the plurality of contact plugs, respectively, wherein the contact plugs are spaced apart from centers of the bit lines in the second horizontal direction at a certain gap in the second horizontal direction.

公开(公告)号：US11805639B2

公开(公告)日：2023-10-31

申请号：US17372634

申请日：2021-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euna Kim ,  Keunnam Kim ,  Kiseok Lee ,  Wooyoung Choi ,  Sunghee Han

IPC: H10B12/00 ,  H01L23/528

CPC classification number: H10B12/315 ,  H01L23/528 ,  H10B12/0335 ,  H10B12/482 ,  H10B12/485

Abstract: A semiconductor device includes a substrate including an active region, a first bitline structure and a second bitline structure that extend side by side on the substrate, a storage node contact electrically connected to the active region between the first and second bitline structures, a lower landing pad between the first and second bitline structures and on the storage node contact, an upper landing pad in contact with the first bitline structure and electrically connected to the lower landing pad, and a capping insulating layer. A lower surface of the upper landing pad in contact with the first bitline structure and a lower surface of the capping insulating layer in contact with the lower landing pad each include a portion in which a horizontal separation distance is increased from the adjacent upper landing pad in a direction toward the substrate.

公开(公告)号：US20210351184A1

公开(公告)日：2021-11-11

申请号：US17384347

申请日：2021-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosub Kim ,  Keunnam Kim ,  Dongoh Kim ,  Bongsoo Kim ,  Euna Kim ,  Chansic Yoon ,  Kiseok Lee ,  Hyeonok Jung ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L23/528

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.