SEMICONDUCTOR MEMORY DEVICE
    2.
    发明申请

    公开(公告)号:US20250142805A1

    公开(公告)日:2025-05-01

    申请号:US18784296

    申请日:2024-07-25

    Abstract: A semiconductor memory device includes a semiconductor pattern on the substrate, and extending in a first horizontal direction, a bit-line and a first electrode of an information storage element electrically connected to two opposite ends of the semiconductor pattern, respectively, and a gate electrode on the semiconductor pattern, wherein the first electrode includes a first area and a second area spaced apart from each other in a vertical direction, and a connection area connecting the first area with the second area, wherein each of the first area and the second area includes first and second extensions spaced apart from each other in the vertical direction, and a connection portion connecting the first extension and the second extension and separated from the connection area, and wherein the connection area connects the second extension of the first area and the first extension of the second area adjacent to each other.

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