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公开(公告)号:US20230193080A1
公开(公告)日:2023-06-22
申请号:US18060120
申请日:2022-11-30
Applicant: Samsung Electronics Co., Ltd
Inventor: YEA RIN BYUN , IN KWON KIM , SANG KYUN KIM , HYO SAN LEE , BYUNG KEUN HWANG
IPC: C09G1/02 , B24B37/04 , H01L21/321
CPC classification number: C09G1/02 , B24B37/044 , H01L21/3212
Abstract: Slurry compositions for chemical mechanical polishing, chemical mechanical polishing apparatuses using the same, and methods for fabricating a semiconductor device using the same are provided. The slurry composition for chemical mechanical polishing may include polishing particles in an amount of 0.1% to 10% by weight of the slurry composition, an oxidant in an amount of 0.1% to 5% by weight of the slurry composition, a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition. The thermo-sensitive agent may include metal nanoparticles or metal oxide nanoparticles, and water, wherein the slurry composition has a pH of 1 to 8.
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2.
公开(公告)号:US20230167566A1
公开(公告)日:2023-06-01
申请号:US17874442
申请日:2022-07-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: IN KWON KIM , Kyu Hyoung Lee , Sang Kyun Kim , Chul Oh Park , Min Young Kim , Hyo San Lee
Abstract: Cerium oxide nanoparticles and methods of fabricating the same are provided. The cerium oxide nanoparticles may be fabricated by a method that may include injecting metal ions into cerium oxide particles and then removing (e.g., desorbing) at least some of the injected metal ions from the cerium oxide particles.
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