公开(公告)号：US12199127B2

公开(公告)日：2025-01-14

申请号：US17528237

申请日：2021-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon Kang ,  Mintae Ryu ,  Minsu Lee ,  Wonsok Lee

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

公开(公告)号：US12272709B2

公开(公告)日：2025-04-08

申请号：US17655576

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho Jang ,  Jeongsoon Kang ,  Donghyun Kim ,  Seungkuk Kang ,  Insung Joe

IPC: H01L27/146

Abstract: An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.

公开(公告)号：US11348960B2

公开(公告)日：2022-05-31

申请号：US16799287

申请日：2020-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoun-Jee Ha ,  Changhwa Kim ,  Jeongsoon Kang

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a substrate and a conductive line pattern. The substrate includes an isolation pattern that extends from a bottom surface of the substrate into the substrate and defines pixel regions, and a photoelectric conversion region and a transistor for each of the pixel regions. The conductive line pattern is disposed on a top surface of the substrate, and vertically overlaps the isolation pattern in plan view and electrically connects to transistors of two or more of the pixel regions.

公开(公告)号：US20240038792A1

公开(公告)日：2024-02-01

申请号：US18482923

申请日：2023-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongseok Cho ,  Jongeun Park ,  Jeongsoon Kang ,  Gyunha Park ,  Gwideok Ryan Lee

IPC: H01L27/146 ,  H04N25/79 ,  H04N25/77 ,  H04N25/78

CPC classification number: H01L27/1461 ,  H04N25/79 ,  H04N25/77 ,  H04N25/78 ,  H01L27/14645

Abstract: The stacked image sensor includes a first semiconductor substrate and including a photoelectric conversion region and a floating diffusion area, a first insulating layer under the first semiconductor substrate and including a gate of a transfer transistor, a second semiconductor substrate under the first insulating layer and including first impurities of a first conductivity type, and a second insulating layer under the second semiconductor substrate and including a metal pad of a floating diffusion node and a gate of a source follower transistor, wherein the floating diffusion area and the metal pad of the floating diffusion node are electrically connected through a deep contact that is in the first insulating layer and the second semiconductor substrate. The second semiconductor substrate further includes a well region. At least a portion of deep contact may be in the well region. The well region may surround the deep contact.

公开(公告)号：US20230197756A1

公开(公告)日：2023-06-22

申请号：US18065531

申请日：2022-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Jeongsoon Kang ,  Jihong Kim ,  Changyong Um

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14645

Abstract: An image sensor includes a first lower chip, and an upper chip on and bonded to the first lower chip. The first lower chip and the upper chip collectively provide a plurality of pixels. A respective pixel of the plurality of pixels includes a photoelectric conversion element, a floating diffusion region, a ground region, and a transfer gate in the upper chip, and a plurality of lower transistors in the first lower chip. A first lower transistor among the plurality of lower transistors includes a plurality of first channel layers stacked vertically, and a first gate on the plurality of first channel layers.

公开(公告)号：US12021095B2

公开(公告)日：2024-06-25

申请号：US17376333

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon Kang ,  Buil Jung ,  Hyunmog Park ,  Wonsok Lee

IPC: H01L27/146 ,  H01L29/423

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/42376

Abstract: An image sensor includes a substrate having a pixel area in which a plurality of active areas is defined. A first transistor includes a first gate electrode including a buried gate portion. The buried gate portion is buried in the substrate in a first active area selected from the plurality of active areas. A second transistor includes a second gate electrode overlapping the buried gate portion on the first active area in a vertical direction.

公开(公告)号：US20230030489A1

公开(公告)日：2023-02-02

申请号：US17655576

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINHO JANG ,  Jeongsoon Kang ,  Donghyun Kim ,  Seungkuk Kang ,  Insung Joe

IPC: H01L27/146

Abstract: An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.

公开(公告)号：US20240321930A1

公开(公告)日：2024-09-26

申请号：US18612450

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongsoon Kang ,  Gyunha Park ,  Daehoon Kim ,  Jongeun Park ,  Gwideokryan Lee ,  Dongseok Cho

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627

Abstract: Provided is an image sensor including a first substrate including a first surface to which light is incident and a second surface opposite the first surface, a second substrate facing the second surface of the first substrate, a wiring layer between the first substrate and the second substrate and including an insulating layer and a conductive structure in the insulating layer, a first floating diffusion region provided in the first substrate, a first through electrode penetrating through the second substrate and electrically connected to the first floating diffusion region through the conductive structure, a second floating diffusion region provided in the second substrate, and a landing pad arranged on a bottom surface of the second substrate and electrically connected to the second floating diffusion region, wherein a bottom surface of the first through electrode may be in contact with the landing pad.

公开(公告)号：US11515348B2

公开(公告)日：2022-11-29

申请号：US16900076

申请日：2020-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho Jang ,  Jeongsoon Kang ,  Taehyoung Kim ,  Masaru Ishii ,  In Sung Joe

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a first surface, a charge storage portion disposed in the substrate, a light-blocking pattern disposed on the first surface overlapping the charge storage portion, and a low-refractive index pattern on the light-blocking pattern.

公开(公告)号：US20220262829A1

公开(公告)日：2022-08-18

申请号：US17731962

申请日：2022-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOUN-JEE HA ,  Changhwa Kim ,  Jeongsoon Kang

IPC: H01L27/146

Abstract: A semiconductor device includes a substrate, a gate pattern, and a conductive line pattern. The substrate has a first surface and a second surface and includes an isolation pattern that defines plural pixel regions, and a photoelectric conversion region in each pixel region and a transistor for each of the pixel regions. The gate pattern of the transistor is disposed on the first surface of the substrate. The conductive line pattern is disposed on the first surface of the substrate and vertically overlaps the isolation pattern in plan view. A top surface of the conductive line pattern is located at the same level as a top surface of the gate pattern, a width of the conductive line pattern is less than a width of the isolation pattern, and the isolation pattern comprises a conducive isolation pattern and a dielectric isolation pattern.