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    Semiconductor devices
    1.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US10573651B2

    公开(公告)日：2020-02-25

    申请号：US16422054

    申请日：2019-05-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Nam-Gun Kim ,  Joonkyu Rhee ,  Ji-Hye Lee ,  Chanmi Lee ,  Taeseop Choi

    IPC: H01L27/108 ,  H01L21/768

    Abstract: Example embodiments relate to a semiconductor device. The semiconductor device includes a substrate including an active region extending in a first direction, a plurality of bit lines running across the active region in a second direction crossing the first direction, a first spacer on a sidewall of the bit line, and a storage node contact on the active region between adjacent bit lines. The first spacer includes a first part between the storage node contact and the bit line, a second part between the first part and the storage node contact, and a third part between the first and second parts. A minimum vertical thickness of the first part is greater than a maximum vertical thickness of the third part. The maximum vertical thickness of the third part is greater than a maximum vertical thickness of the second part.

    Method and apparatus for submitting user content in DCD service
    2.
    发明授权
    Method and apparatus for submitting user content in DCD service 有权

    公开(公告)号：US10158699B2

    公开(公告)日：2018-12-18

    申请号：US14447144

    申请日：2014-07-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji-Hye Lee ,  Hae-Young Jun ,  Seok-Hoon Choi

    IPC: G06F15/16 ,  H04L29/08 ,  H04W4/18 ,  H04W4/20

    Abstract: Disclosed is a method for updating or sharing content by a terminal, including generating a request for updating or sharing content, transmitting the request to a server, wherein the server transmits a notification that the content is shared to the at least one terminal if a first element in an information element of the request indicates that the content is the public content, and receiving, from the server, updated content or an indication for displaying the content if the content is updated or is to be displayed on the terminal based on the condition.

    SEMICONDUCTOR DEVICES
    3.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20180261601A1

    公开(公告)日：2018-09-13

    申请号：US15974943

    申请日：2018-05-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Nam-Gun KIM ,  Joonkyu Rhee ,  Ji-Hye Lee ,  Chanmi Lee ,  Taeseop Choi

    IPC: H01L27/108 ,  H01L21/768

    CPC classification number: H01L27/10814 ,  H01L21/7682 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

    Abstract: Example embodiments relate to a semiconductor device. The semiconductor device includes a substrate including an active region extending in a first direction, a plurality of bit lines running across the active region in a second direction crossing the first direction, a first spacer on a sidewall of the bit line, and a storage node contact on the active region between adjacent bit lines. The first spacer includes a first part between the storage node contact and the bit line, a second part between the first part and the storage node contact, and a third part between the first and second parts. A minimum vertical thickness of the first part is greater than a maximum vertical thickness of the third part. The maximum vertical thickness of the third part is greater than a maximum vertical thickness of the second part.

    Semiconductor devices
    4.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US09997521B2

    公开(公告)日：2018-06-12

    申请号：US15405808

    申请日：2017-01-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Nam-Gun Kim ,  Joonkyu Rhee ,  Ji-Hye Lee ,  Chanmi Lee ,  Taeseop Choi

    IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L21/768

    CPC classification number: H01L27/10814 ,  H01L21/7682 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

    Abstract: Example embodiments relate to a semiconductor device. The semiconductor device includes a substrate including an active region extending in a first direction, a plurality of bit lines running across the active region in a second direction crossing the first direction, a first spacer on a sidewall of the bit line, and a storage node contact on the active region between adjacent bit lines. The first spacer includes a first part between the storage node contact and the bit line, a second part between the first part and the storage node contact, and a third part between the first and second parts. A minimum vertical thickness of the first part is greater than a maximum vertical thickness of the third part. The maximum vertical thickness of the third part is greater than a maximum vertical thickness of the second part.

    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20170294439A1

    公开(公告)日：2017-10-12

    申请号：US15433199

    申请日：2017-02-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Nam-Gun KIM ,  Chanmi Lee ,  Joonkyu Rhee ,  Ji-Hye Lee ,  Taeseop Choi

    IPC: H01L27/108

    CPC classification number: H01L27/10805 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/228 ,  H01L27/2436

    Abstract: Semiconductor devices and method of manufacturing the same are provided. The devices may include a substrate including a first impurity region and second impurity regions spaced apart from the first impurity region and a conductive line. The conductive line may extend in a first direction and may be electrically connected to the first impurity region. The devices may also include first conductive contacts on a side of the conductive line and arranged in the first direction and first insulation patterns on the side of the conductive line and arranged in the first direction. The first conductive contacts may be electrically connected to the second impurity regions. The first conductive contacts and the first insulation patterns may be alternately disposed along the first direction. Top surfaces of the first insulation patterns may be lower than a top surface of the conductive line relative to an upper surface of the substrate.

    Apparatus and method for monitoring semiconductor fabrication processes using polarized light
    7.
    发明授权
    Apparatus and method for monitoring semiconductor fabrication processes using polarized light 有权
    使用偏振光监测半导体制造工艺的装置和方法

    公开(公告)号：US09322771B2

    公开(公告)日：2016-04-26

    申请号：US14197608

    申请日：2014-03-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woong-Kyu Son ,  Kwang-Hoon Kim ,  Deok-Yong Kim ,  Sung-Soo Moon ,  Jung-Hoon Byun ,  Ji-Hye Lee ,  Choon-Shik Leem ,  Soo-Bok Chin

    IPC: G01N21/33 ,  G01N21/21 ,  G03F7/22 ,  G03F7/20

    CPC classification number: H01L22/12 ,  G01N21/21 ,  G01N21/33 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8848 ,  G03F7/70625

    Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

    Abstract translation: 本发明的概念提供了使用偏振光来实时监控半导体制造工艺的装置和方法。 在一些实施例中，该装置包括被配置为产生光的光源，被配置为将光朝向正被处理的晶片反射的分束器，物镜偏振器，被配置为使朝向晶片反射的光偏振，并允许由晶片反射的光 通过其配置成根据波长分离由晶片反射的光的火焰光栅，被配置为检测分离的光的阵列检测器和分析器，以分析在晶片中形成的结构/图案的三维轮廓。

    METHOD AND SYSTEM FOR PROVIDING MEDIA STORED IN A PoC BOX IN A PoC SYSTEM
    8.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MEDIA STORED IN A PoC BOX IN A PoC SYSTEM 审中-公开
    PoC系统中PoC盒中存储媒体的方法和系统

    公开(公告)号：US20140087779A1

    公开(公告)日：2014-03-27

    申请号：US14093951

    申请日：2013-12-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-Jin PARK ,  Wuk Kim ,  Sang-Kyung Sung ,  Ji-Hye Lee

    IPC: H04W4/10

    CPC classification number: H04W4/10 ,  H04L65/1069 ,  H04L65/4061 ,  H04W4/12 ,  H04W76/45

    Abstract: Methods are provided for managing media in a PoC box in an aggregation proxy server for sending media to a PoC UE in a PoC system. The aggregation proxy server receives a PoC session control data request message, which is associated with media information stored in the PoC box from the PoC UE. The PoC session control data request message for requesting the media information stored in the PoC box is sent to the PoC box. The media information is received in an XML form from the PoC box in response to the PoC session control data request message, and the media information received from the PoC box is sent to the PoC UE. The media information includes a parameter related to a stored position of media stored in the PoC box.

    Abstract translation: 提供了用于在用于在PoC系统中向PoC UE发送媒体的聚合代理服务器中的PoC框中管理媒体的方法。 聚合代理服务器接收PoC会话控制数据请求消息，该消息与来自PoC UE的PoC盒中存储的媒体信息相关联。 用于请求存储在PoC盒中的媒体信息的PoC会话控制数据请求消息被发送到PoC盒。 响应于PoC会话控制数据请求消息，从PoC盒接收媒体信息，并且从PoC盒接收到的媒体信息被发送到PoC UE。 媒体信息包括与存储在PoC盒中的媒体的存储位置有关的参数。

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