Abstract:
A method of recycling helium from a waste gas generated in a semiconductor process includes forming a first treatment gas by treating helium-containing waste gas emitted from a semiconductor process facility by using a scrubber module, transporting the first treatment gas to a purification facility, forming a first helium gas with a first purity by fractionating the first treatment gas in the purification facility, forming a second helium gas with a second purity by treating the first helium gas by using a back-end purification module in the purification facility, and providing the second helium gas to the semiconductor process facility.
Abstract:
An electronic device includes a first printed circuit board (PCB) including an opening, and a plurality of first connecting terminals disposed to be spaced apart from each other along a circumference of the opening, a camera module including a second PCB, and a connecting interface including an interface body connected to a lower end of the camera module. A plurality of second connecting terminals formed of an elastic material and are disposed to be spaced apart from each other along a circumference of the interface body to be electrically connected to the second PCB. The connecting interface is inserted into the opening so that the first connecting terminals are electrically connected to one respective second connecting terminal of the plurality of second connecting terminals, and a relative position of the connecting interface with respect to the opening is fixed by an elastic force of the plurality of second connecting terminals.
Abstract:
A condensed cyclic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
Abstract:
An organic light-emitting device including an emission layer including a first electrode; a second electrode facing the first electrode; and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer comprises an emission layer, the emission layer comprises a first compound, a second compound, and a third compound, and the first compound and the second compound are different from each other, each of the first compound and the second compound emits light, the third compound does not emit light, and the first compound and the second compound satisfy Conditions and Inequalities as described herein.
Abstract:
An organic light-emitting device comprising: a first electrode; a second electrode facing the first electrode; and an emission layer between the first electrode and the second electrode, wherein the emission layer comprises a host and a thermally activated delayed fluorescence emitter, the host comprises a first material and a second material, the first material and the second material are different from each other, the second material has a dipole moment of about 5.5 debye or more, the second material does not comprise a group represented by *=o, and * indicates a binding site to a neighboring atom.
Abstract:
An organic light-emitting device which including a first electrode, a second electrode facing the first electrode, and an emission layer disposed between the first electrode and the second electrode, wherein an emission layer includes a first material, a second material, and a third material satisfying certain conditions.
Abstract:
A condensed cyclic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
Abstract:
An organic light-emitting device including a first electrode, a second electrode facing the first electrode, and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer includes an emission layer, wherein the emission layer includes a host and a dopant, and wherein the organic light-emitting device satisfies predetermined conditions described in the specification.
Abstract:
A condensed cyclic compound represented by Formula 1: Ar1-L1-L2-Ar2 Formula 1 wherein Ar1, Ar2, L1, and L2 are the same as described in the specification.
Abstract:
An integrated circuit device comprising a base structure, a gate stack on the base structure and comprising a plurality of gate electrodes spaced apart from each other, a first upper insulating layer on the gate stack, a plurality of channel structures that penetrate the gate stack, each of the plurality of channel structures comprises a respective alignment key protruding from the gate stack, a second upper insulating layer that overlaps the respective alignment key of each of the plurality of channel structures, a top supporting layer on the second upper insulating layer, a bit line on the top supporting layer, and a plurality of bit line contacts that electrically connect respective ones of the plurality of channel structures to the bit line. A sidewall of the first upper insulating layer includes a first step.