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    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING DISPLAY PANEL USING THE SAME
    4.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING DISPLAY PANEL USING THE SAME 有权

    公开(公告)号：US20210005794A1

    公开(公告)日：2021-01-07

    申请号：US16716752

    申请日：2019-12-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tan SAKONG ,  Juhyun KIM

    IPC: H01L33/56 ,  H01L33/50

    Abstract: A method of manufacturing a light emitting device package and a method of manufacturing a display panel, the method of manufacturing a light emitting device package including forming a semiconductor laminate on a substrate such that the semiconductor laminate has a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; separating the semiconductor laminate into semiconductor light emitters, separated from each other, by forming a trench having a predetermined depth in the substrate by etching through the semiconductor laminate in a direction of the first surface of the substrate; forming a molding that fills the trench and insulates the semiconductor light emitters from each other by applying a flexible insulating material to cover the semiconductor light emitters; forming grooves separated from each other by the molding and overlying to the semiconductor light emitters, respectively, by removing the substrate; and forming wavelength converters in the grooves.

    MAGNETIC MEMORY DEVICES
    5.
    发明申请
    MAGNETIC MEMORY DEVICES 有权

    公开(公告)号：US20240423097A1

    公开(公告)日：2024-12-19

    申请号：US18525322

    申请日：2023-11-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JeongMok KIM ,  Juhyun KIM ,  Se Chung OH ,  Junho Jeong

    IPC: H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

    Abstract: A memory device comprising a reference magnetic pattern and a free magnetic pattern sequentially stacked on a substrate; and a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, wherein the reference magnetic pattern includes: a first pinning pattern; a second pinning pattern between the first pinning pattern and the tunnel barrier pattern; and an exchange coupling pattern between the first pinning pattern and the second pinning pattern, the exchange coupling pattern antiferromagnetically coupling the first pinning pattern and the second pinning pattern, wherein the first pinning pattern includes: a first magnetic pattern; and a second magnetic pattern between the first magnetic pattern and the exchange coupling pattern, the first magnetic pattern is a single layer including an alloy of a first ferromagnetic element and a first non-magnetic metal element, and wherein the second magnetic pattern is a single layer including a second ferromagnetic element.

    SEMICONDUCTOR LIGHT-EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210366982A1

    公开(公告)日：2021-11-25

    申请号：US17181213

    申请日：2021-02-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sangbum LEE ,  Inho KIM ,  Geunwoo KO ,  Yongmin KWON ,  Juhyun KIM ,  Jungwook LEE

    IPC: H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

    Abstract: A semiconductor light-emitting device includes a light-emitting pixel region and a pad region, and includes light-emitting structures, a partition wall structure, a passivation structure, and a fluorescent layer, positioned in the light-emitting pixel region, and a pad unit positioned in the pad region. The partition wall structure includes partition walls defining pixel spaces. The passivation structure surrounds the partition walls and includes a first passivation layer including a first insulating material and a second passivation layer including a second insulating material different from the first insulating material. The passivation structure includes a first portion on a top surface of the partition walls, a second portion on a sidewall of the partition walls, and a third portion between the light-emitting structures and the fluorescent layer. A first thickness of the first portion is less than or equal to a second thickness of the second portion.

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