公开(公告)号：US20150363106A1

公开(公告)日：2015-12-17

申请号：US14722158

申请日：2015-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Young LIM ,  Dong-Yang LEE ,  Young-Jin CHO ,  Oh-Seong KWON

IPC: G06F3/06

CPC classification number: G11C7/10 ,  G06F13/1694 ,  G11C7/1063 ,  G11C7/109

Abstract: An electronic device includes a memory controller; a first memory device coupled to the memory controller; a second memory device coupled to the memory controller, the second memory device being a different type of memory from the first memory device; and a conversion circuit between the memory controller and the second memory device. The memory controller is configured to send a first command and first data to the first memory device according to a first timing scheme to access the first memory device, and send a second command and a packet to the conversion circuit according to the first timing scheme to access the second memory device. The conversion circuit is configured to receive the second command and the packet, and access the second memory device based on the second command and the packet.

Abstract translation: 电子设备包括存储器控制器; 耦合到所述存储器控制器的第一存储器件; 耦合到所述存储器控制器的第二存储器设备，所述第二存储器设备是与所述第一存储器设备不同类型的存储器; 以及存储器控制器和第二存储器件之间的转换电路。 存储器控制器被配置为根据第一定时方案向第一存储器设备发送第一命令和第一数据以访问第一存储器件，并且根据第一定时方案向转换电路发送第二命令和数据包到第 访问第二个存储设备。 转换电路被配置为接收第二命令和分组，并且基于第二命令和分组访问第二存储器设备。

公开(公告)号：US20180019314A1

公开(公告)日：2018-01-18

申请号：US15717324

申请日：2017-09-27

Applicant: Samsung Electronics Co ., Ltd .

Inventor： Wan-Don Kim ,  Oh-Seong KWON ,  Hoon-Joo NA ,  Hyeok-Jun SON ,  Jae-Yeol SONG ,  Sung-Kee HAN ,  Sang-Jin HYUN

IPC: H01L29/49 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/423

CPC classification number: H01L29/4966 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/0886 ,  H01L29/42364 ,  H01L29/4238

Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.

公开(公告)号：US20140145306A1

公开(公告)日：2014-05-29

申请号：US14170758

申请日：2014-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan-Don KIM ,  Beom-Seok KIM ,  Yong-Suk TAK ,  Kyu-Ho CHO ,  Seung-hwan LEE ,  Oh-Seong KWON ,  Geun-Kyu CHOI

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L24/32 ,  H01L28/90 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/8385

Abstract: A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5 eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.

Abstract translation: 多个金属图案设置在基板上。 在多个金属图案之间提供支撑结构。 支撑结构具有支撑体和胶层。 当从横截面视图观察时，多个金属图案中的每一个具有比基板上的水平长度更大的垂直长度。 该支架具有至少4.5eV的带隙能量。 胶层与多个金属图案接触。 支撑体和胶层由不同的材料形成。

公开(公告)号：US20130217203A1

公开(公告)日：2013-08-22

申请号：US13845765

申请日：2013-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oh-Seong KWON ,  Kyu-Ho CHO ,  Wan-Don KIM ,  Beom-Seok KIM ,  Yong-Suk TAK

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L27/10852 ,  H01L27/10876 ,  H01L28/65

Abstract: A capacitor in a semiconductor memory device comprises a lower electrode on a substrate that is formed of a conductive metal oxide having a rutile crystalline structure, a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and includes impurities for reducing a leakage current, and an upper electrode on the titanium oxide dielectric layer. A method of forming a capacitor in a semiconductor device comprise steps of forming a lower electrode on a substrate that includes a conductive metal oxide having a rutile crystalline structure, forming a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and impurities for reducing a leakage current, and forming an upper electrode on the titanium oxide dielectric layer.

Abstract translation: 半导体存储器件中的电容器包括由具有金红石晶体结构的导电金属氧化物形成的衬底上的下电极，下电极上的具有金红石晶体结构的氧化钛电介质层，并且包括用于减少漏电的杂质 电流和氧化钛电介质层上的上电极。 在半导体器件中形成电容器的方法包括以下步骤：在包括具有金红石晶体结构的导电金属氧化物的衬底上形成下电极，在具有金红石晶体结构的下电极上形成氧化钛电介质层和杂质 用于减少漏电流，以及在氧化钛电介质层上形成上电极。