公开(公告)号：US20190031906A1

公开(公告)日：2019-01-31

申请号：US15925034

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Minsu SEOL ,  Hyeonjin SHIN ,  Dongwook LEE ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: C09D165/00 ,  C01B32/184 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/311 ,  H01L21/027

CPC classification number: C09D165/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/184 ,  C08G61/02 ,  C08G2261/3424 ,  G03F7/094 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144 ,  Y10S977/734 ,  Y10S977/774 ,  Y10S977/842

Abstract: Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250° C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.

公开(公告)号：US20170229546A1

公开(公告)日：2017-08-10

申请号：US15494035

申请日：2017-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun JEONG ,  Seongjun PARK ,  Yunseong LEE

IPC: H01L29/16 ,  H01L29/786 ,  H01L21/04 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L27/088

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02527 ,  H01L21/02603 ,  H01L21/042 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/467 ,  H01L21/823412 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66037 ,  H01L29/66045 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78696 ,  H01L51/0045 ,  Y10S977/755 ,  Y10S977/888

Abstract: Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

公开(公告)号：US20170117399A1

公开(公告)日：2017-04-27

申请号：US15334684

申请日：2016-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wonhee KO ,  Hyowon KIM ,  Jiyeon KU ,  Donggyu KIM ,  Seunghwa RYU ,  Seongjun JEONG

IPC: H01L29/778 ,  H01L29/06 ,  H01L21/306 ,  H01L21/02 ,  H01L21/308 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L21/30604 ,  H01L21/02524 ,  H01L21/3085 ,  H01L23/481 ,  H01L29/413

Abstract: A conductor including a graphene layer and a method of manufacturing the conductor are provided. The conductor may further include a nano pattern disposed on a substrate, and the graphene layer may be formed on the nano pattern. The nano pattern may have any various shapes and include a material that interacts with the graphene layer. The nano pattern and the graphene layer included in the conductor may interact with each other, such that the electric characteristics of the conductor are maintained while the heat transfer characteristics thereof are improved.

公开(公告)号：US20170011930A1

公开(公告)日：2017-01-12

申请号：US15068110

申请日：2016-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun JEONG ,  Seongjun PARK ,  Yunseong LEE

IPC: H01L21/308 ,  H01L29/06 ,  H01L21/3065 ,  H01L29/16

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02527 ,  H01L21/02603 ,  H01L21/042 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/467 ,  H01L21/823412 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66037 ,  H01L29/66045 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78696 ,  H01L51/0045 ,  Y10S977/755 ,  Y10S977/888

Abstract: Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

Abstract translation: 提供形成石墨烯纳米图案的方法，含有石墨烯的装置以及制造含石墨烯的装置的方法。 形成石墨烯纳米图案的方法可以包括在基底上形成石墨烯层，在石墨烯层上形成嵌段共聚物层，在石墨烯层的至少一侧露出衬底的区域，从块形成掩模图案 通过除去嵌段共聚物的多个第一区域和多个第二区域中的一个，并且通过使用掩模图案作为蚀刻掩模，将纳米级的石墨烯层图案化。 嵌段共聚物层可以形成为直接接触石墨烯层。 嵌段共聚物层可以形成为直接接触在石墨烯层的至少一侧上暴露的衬底结构的区域。

公开(公告)号：US20210223683A1

公开(公告)日：2021-07-22

申请号：US17223568

申请日：2021-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Hyeonjin SHIN ,  Seongjun JEONG ,  Seongjun PARK

IPC: G03F1/62 ,  G03F1/64

Abstract: A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.

公开(公告)号：US20190016906A1

公开(公告)日：2019-01-17

申请号：US15944920

申请日：2018-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Sangwon KIM ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: C09D7/63 ,  C07F3/02 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/311 ,  H01L21/3213

Abstract: Provided are a hardmask composition including a structure represented by Formula 1 and a solvent, a method of forming a pattern using the hardmask composition, and a hardmask formed from the hardmask composition. wherein in Formula 1, R1 to R8, X, and M are described in detail in the detailed description.

公开(公告)号：US20190033705A1

公开(公告)日：2019-01-31

申请号：US16004585

申请日：2018-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Hyeonjin SHIN ,  Seongjun JEONG ,  Seongjun PARK

IPC: G03F1/62

Abstract: A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.

公开(公告)号：US20190019675A1

公开(公告)日：2019-01-17

申请号：US15874226

申请日：2018-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook LEE ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Hyeonjin SHIN ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: H01L21/033 ,  H01L21/311 ,  C01B32/194

Abstract: Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M-O—C bond or an M-C bond, where M is a metal element, O is oxygen, and C is carbon.

公开(公告)号：US20190033704A1

公开(公告)日：2019-01-31

申请号：US15946087

申请日：2018-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun JEONG ,  Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park ,  Minsu Seol ,  Dongwook Lee ,  Yunseong Lee ,  Alum Jung

IPC: G03F1/62 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/62 ,  G03F1/22 ,  G03F7/70008 ,  G03F7/70983

Abstract: A pellicle composition for a photomask, a pellicle for a photomask, the pellicle for a photomask being formed from the pellicle composition, a method of forming the pellicle, a reticle including the pellicle, and an exposure apparatus for lithography including the reticle are provided. The pellicle composition includes: at least one selected from graphene quantum dots and a graphene quantum dot precursor, the graphene quantum dots having a size of about 50 nm or less; and a solvent.

公开(公告)号：US20180061734A1

公开(公告)日：2018-03-01

申请号：US15497683

申请日：2017-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook LEE ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun JEONG ,  Seunggeol NAM ,  Seongjun PARK ,  Hyeonjin SHIN

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/31

CPC classification number: H01L23/3733 ,  B82Y30/00 ,  C08K3/042 ,  H01L21/4871 ,  H01L23/3171 ,  H01L23/373 ,  H01L23/3737 ,  H01L23/3738 ,  H01L23/42

Abstract: Disclosed are heat dissipation structures using nano-sized graphene fragments such as graphene quantum dots (GQDs) and/or methods of manufacturing the heat dissipation structures. A heat dissipation structure includes a heating element, and a heat dissipation film on the heating element to dissipate heat generated from the heating element, to outside. The heat dissipation film may include GQDs.