公开(公告)号：US20230152715A1

公开(公告)日：2023-05-18

申请号：US17982761

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyeok Jeong ,  Donghwan Kim ,  Inchul Shin ,  Wonhyeok Jo ,  Hyein Cho ,  Seulgi Han

IPC: G03F7/20 ,  G01N21/95 ,  H01L23/544

CPC classification number: G03F7/70633 ,  G01N21/9501 ,  G03F7/70216 ,  G03F7/70683 ,  H01L23/544 ,  G02B27/60

Abstract: A method for manufacturing a semiconductor device may include: forming a first layer comprising a plurality of patterns, each pattern having a different respective pitch; performing exposure and development to form a second layer at a layer different from the first layer; determining whether a pitch shift of a part of exposure patterns formed is within a tolerance range, using a Moire pattern; and performing etching for the second layer when the pitch shift of the part of exposure patterns is determined to be within the tolerance range. Performing the exposure and the development may include forming a first exposure pattern corresponding to a key pattern having a first pitch, forming a second exposure pattern corresponding to a cell pattern having a second pitch, and forming a third exposure pattern corresponding to a middle pitch pattern having a third pitch between the first pitch and the second pitch.

公开(公告)号：US12259662B2

公开(公告)日：2025-03-25

申请号：US17982761

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyeok Jeong ,  Donghwan Kim ,  Inchul Shin ,  Wonhyeok Jo ,  Hyein Cho ,  Seulgi Han

IPC: G03F7/00 ,  G01N21/95 ,  H01L23/544 ,  G02B27/60

Abstract: A method for manufacturing a semiconductor device may include: forming a first layer comprising a plurality of patterns, each pattern having a different respective pitch; performing exposure and development to form a second layer at a layer different from the first layer; determining whether a pitch shift of a part of exposure patterns formed is within a tolerance range, using a Moiré pattern; and performing etching for the second layer when the pitch shift of the part of exposure patterns is determined to be within the tolerance range. Performing the exposure and the development may include forming a first exposure pattern corresponding to a key pattern having a first pitch, forming a second exposure pattern corresponding to a cell pattern having a second pitch, and forming a third exposure pattern corresponding to a middle pitch pattern having a third pitch between the first pitch and the second pitch.