公开(公告)号：US20240210832A1

公开(公告)日：2024-06-27

申请号：US18344992

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chawon KOH ,  Sungkun KANG ,  Tsunehiro NISHI ,  Young Joo CHOI

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/039 ,  G03F7/38

CPC classification number: G03F7/168 ,  G03F7/0042 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/0392 ,  G03F7/38

Abstract: Disclosed photoresist topcoat compositions including a polymer including at least one of the first structural units represented by Chemical Formula 1 or Chemical Formula 2, a thermal acid generator (TAG), and a solvent; and a method of forming patterns using the photoresist topcoat composition.

公开(公告)号：US20230314956A1

公开(公告)日：2023-10-05

申请号：US18125923

申请日：2023-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungkun KANG ,  Chawon KOH ,  Tsunehiro NISHI

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F1/38 ,  H01J37/32

CPC classification number: G03F7/70033 ,  G03F7/0042 ,  G03F7/0025 ,  G03F7/0046 ,  G03F7/168 ,  G03F1/38 ,  H01J37/32458

Abstract: A substrate processing method includes forming a layer of an inorganic photoresist composition on a substrate, irradiating the layer of the inorganic photoresist composition with extreme ultraviolet (EUV) light using an exposure mask, baking the layer of the inorganic photoresist composition, which is irradiated with EUV light, developing the layer of the inorganic photoresist composition using a developer to form a first inorganic photoresist pattern, performing plasma treatment on the first inorganic photoresist pattern to form a second inorganic photoresist pattern, and processing the substrate using the second inorganic photoresist pattern as a process mask, wherein the plasma treatment uses plasma of a process gas capable of generating hydrogen ions and fluorine ions.

公开(公告)号：US20230076633A1

公开(公告)日：2023-03-09

申请号：US17902142

申请日：2022-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungkun KANG ,  Chawon KOH ,  Hyunjae LEE ,  Tsunehiro NISHI

IPC: H01L21/027 ,  H01L21/311 ,  H01J37/32 ,  G03F7/004

Abstract: A method of manufacturing a semiconductor device, the method including forming a lower film on a substrate; forming a metal-containing photoresist material film on the lower film; patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film; performing a descum operation to remove the scum from the lower film; and etching the lower film using the photoresist pattern, wherein performing the descum operation includes providing the substrate to a processing chamber; generating oxygen plasma; and reacting the scum with the oxygen plasma.