公开(公告)号：US09728644B2

公开(公告)日：2017-08-08

申请号：US15093892

申请日：2016-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Suk Tak ,  Jongryeol Yoo ,  Hyun Jung Lee ,  Miseon Park ,  Bonyoung Koo ,  Sunjung Kim

IPC: H01L29/00 ,  H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/7851 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7849

Abstract: A semiconductor device includes a fin structure on a substrate and extending in a first direction, a gate electrode crossing over the fin structure, source/drain regions on the fin structure at opposite sides of the gate electrode, and a barrier layer between the fin structure and each of the source/drain regions. The fin structure includes a material having a lattice constant different from that of the substrate, the fin structure, the source/drain regions, and the barrier layer include germanium, and a germanium concentration in the barrier layer is greater than that in the fin structure and less than a maximum germanium concentration in each of the source/drain regions.

公开(公告)号：US11881508B2

公开(公告)日：2024-01-23

申请号：US17843105

申请日：2022-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin Choi ,  Hyunchul Song ,  Sunjung Kim ,  Taegon Kim ,  Seong Hoon Jeong

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H10B10/00 ,  H01L21/308 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165 ,  H01L29/08

CPC classification number: H01L29/0653 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/31155 ,  H01L21/76224 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0847 ,  H10B10/12 ,  H01L21/02208 ,  H01L21/308 ,  H01L21/823821 ,  H01L29/6656 ,  H01L29/66545

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

公开(公告)号：US20140104263A1

公开(公告)日：2014-04-17

申请号：US14050993

申请日：2013-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunjung Kim ,  Wang Hyun Kim ,  Kwanghyun Lee ,  Seokyong Hong ,  Seunghoon Lee ,  JuHwan Jung

IPC: G09G3/36

CPC classification number: G09G3/3696 ,  G09G3/02 ,  G09G3/2092 ,  G09G5/39 ,  G09G2360/142 ,  G11C11/403 ,  G11C11/4076 ,  G11C2211/4016

Abstract: A semiconductor device may include a plurality of banks; and a control unit configured to receive a command from an external device and independently control the plurality of banks according to the received command. Each bank comprises a pixel array including a plurality of pixels; a row decoder configured to activate word lines connected to the plurality of pixels under control of the control unit; a column decoder configured to activate bit lines connected to the plurality of pixels under control of the control unit; a sense amplifier and write driver configured to control and detect respective voltages of the activated bit lines to provide respective amplified voltages; and an input/output buffer configured to output data states of the pixels based on the respective amplified voltages. Related methods of operation are also discussed.

Abstract translation: 半导体器件可以包括多个堤; 以及控制单元，被配置为从外部设备接收命令，并根据所接收的命令独立地控制所述多个存储体。 每个存储体包括包括多个像素的像素阵列; 行解码器，被配置为在所述控制单元的控制下激活连接到所述多个像素的字线; 列解码器，被配置为在所述控制单元的控制下激活连接到所述多个像素的位线; 读出放大器和写入驱动器，被配置为控制和检测激活的位线的相应电压以提供相应的放大电压; 以及输入/输出缓冲器，被配置为基于相应的放大电压输出像素的数据状态。 还讨论了相关的操作方法。

公开(公告)号：US11380760B2

公开(公告)日：2022-07-05

申请号：US17028042

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin Choi ,  Hyunchul Song ,  Sunjung Kim ,  Taegon Kim ,  Seong Hoon Jeong

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/11 ,  H01L29/08 ,  H01L21/308 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/165 ,  H01L29/78 ,  H01L29/423

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

公开(公告)号：US20190333754A1

公开(公告)日：2019-10-31

申请号：US16217339

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung Lee ,  Minjae Kang ,  Se-Yeon Kim ,  Teawon Kim ,  Yong-Suk Tak ,  Sunjung Kim

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/165 ,  C23C16/36 ,  C23C16/455

Abstract: A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.

公开(公告)号：US09608114B2

公开(公告)日：2017-03-28

申请号：US14989956

申请日：2016-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongwoo Kim ,  Seung Hun Lee ,  Sunjung Kim ,  Hyun Jung Lee ,  Bonyoung Koo

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/165 ,  H01L29/06 ,  H01L27/088

CPC classification number: H01L29/7849 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/785

Abstract: A semiconductor device includes a buffer layer on a substrate, the buffer layer having a lattice constant different from that of the substrate, a fin structure upwardly protruding from the buffer layer, a gate electrode crossing over the fin structure, a cladding layer at a side of the fin structure and covering a top surface and sidewalls of the fin structure, and an interfacial layer between the cladding layer and the fin structure, the interfacial layer including a same element as the buffer layer.

公开(公告)号：US09508832B2

公开(公告)日：2016-11-29

申请号：US14749037

申请日：2015-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Jung Lee ,  Bonyoung Koo ,  Sunjung Kim ,  Jongryeol Yoo ,  Seung Hun Lee ,  Poren Tang

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/336 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/66795 ,  H01L21/3085 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823807

Abstract: A method of fabricating a semiconductor device includes forming a channel layer on a substrate, forming a sacrificial layer on the channel layer, forming a hardmask pattern on the sacrificial layer, and performing a patterning process using the hardmask pattern as an etch mask to form a channel portion with an exposed top surface. The channel and sacrificial layers may be formed of silicon germanium, and the sacrificial layer may have a germanium content higher than that of the channel layer.

Abstract translation: 制造半导体器件的方法包括在衬底上形成沟道层，在沟道层上形成牺牲层，在牺牲层上形成硬掩模图案，并使用硬掩模图案作为蚀刻掩模进行图案化处理，形成 通道部分具有​​暴露的顶表面。 通道和牺牲层可由硅锗形成，并且牺牲层的锗含量可高于沟道层的锗含量。

公开(公告)号：US12027401B2

公开(公告)日：2024-07-02

申请号：US17203036

申请日：2021-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwanghee Jo ,  Dongjoo Moon ,  Siwoong Woo ,  Sunjung Kim ,  Donggil Shim ,  Huijae Kim ,  Seungdae Seok

IPC: H01L21/68 ,  G03F7/00 ,  H01L21/677 ,  H01L21/683

CPC classification number: H01L21/68 ,  G03F7/70775 ,  H01L21/67742 ,  H01L21/683 ,  H01L2224/75701 ,  H01L2224/75703

Abstract: A semiconductor substrate alignment device includes: a lower chuck; a lower chuck driving unit; an upper chuck above and overlapping the lower chuck; observation windows in the upper chuck, imaging units respectively configured to irradiate light through the observation windows and to obtain images by detecting light reflected from the semiconductor substrates; a distance sensor configured to detect a distance between an edge of the lower chuck and an edge of the upper chuck; and a control unit configured to identify first and second alignment keys from images of first and second semiconductor substrates, determine an alignment error value of the first and second semiconductor substrates, and compensate for the alignment error value by driving the lower chuck driving unit.

公开(公告)号：US11941368B2

公开(公告)日：2024-03-26

申请号：US17207822

申请日：2021-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sihyoung Lee ,  Beomsu Kim ,  Sunjung Kim ,  Soowan Kim ,  Jaehyun Kim ,  Insun Song ,  Hyunseok Lee ,  Jihwan Choe

IPC: G06F40/58 ,  G06F40/263 ,  G06V10/10 ,  G06V20/20 ,  G06V20/62 ,  G06V30/148 ,  H04N5/14

CPC classification number: G06F40/58 ,  G06F40/263 ,  G06V10/17 ,  G06V20/20 ,  G06V20/62 ,  G06V20/63 ,  G06V30/153 ,  H04N5/144

Abstract: Certain embodiments of the disclosure relate to an apparatus and a method for translating a text included in an image by using an external electronic device in an electronic device. One method comprises displaying a picture comprising an object bearing text at a location within the picture on a display, extracting the text, generating another text from the extracted text, and automatically overlaying the another text on the object in another picture comprising the object at another location within the another picture on the display.

公开(公告)号：US10956767B2

公开(公告)日：2021-03-23

申请号：US16284047

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sihyoung Lee ,  Beomsu Kim ,  Sunjung Kim ,  Soowan Kim ,  Jaehyun Kim ,  Insun Song ,  Hyunseok Lee ,  Jihwan Choe

IPC: G06K9/34 ,  G06K9/32 ,  H04N5/14 ,  G06K9/22 ,  G06K9/00 ,  G06F40/58 ,  G06F40/263

Abstract: Certain embodiments of the disclosure relate to an apparatus and a method for translating a text included in an image by using an external electronic device in an electronic device. One method comprises displaying a picture comprising an object bearing text at a location within the picture on a display, extracting the text, generating another text from the extracted text, and automatically overlaying the another text on the object in another picture comprising the object at another location within the another picture on the display.