公开(公告)号：US11050016B2

公开(公告)日：2021-06-29

申请号：US16506391

申请日：2019-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil Ho Lee ,  Woo Jin Kim ,  Gwan Hyeob Koh

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  G11C11/18 ,  H01L43/08

Abstract: A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.

公开(公告)号：US11532782B2

公开(公告)日：2022-12-20

申请号：US17330969

申请日：2021-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil Ho Lee ,  Woo Jin Kim ,  Gwan Hyeob Koh

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  G11C11/18 ,  H01L43/08

Abstract: A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.