公开(公告)号：US20220251774A1

公开(公告)日：2022-08-11

申请号：US17661146

申请日：2022-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woojin Kim ,  Jinbaek Kim ,  Eungryeol Seo ,  Geonung Lee

IPC: D06F73/00 ,  D06F58/10

Abstract: The present disclosure relates to a clothes care apparatus. The clothes care apparatus includes a main body including a clothes care compartment, a machine compartment, a steam generator provided in the machine compartment configured to generate steam, a steam injector including a steam injection nozzle configured to receive the steam from the steam generator and inject the steam into the clothes care compartment, at least one air injection hole configured to allow air to be injected into the clothes care compartment in order to change a direction of the steam injected from the steam injector, a regulation device configured to regulate a flow rate or a wind direction of the air injected from the at least one air injection hole, and a controller configured to control the regulation device and change the direction of the steam by regulating the air injected from the at least one air injection hole.

公开(公告)号：US10573806B1

公开(公告)日：2020-02-25

申请号：US16392046

申请日：2019-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungtae Nam ,  Seung Pil Ko ,  Woojin Kim ,  Hyunchul Shin ,  Youngsoo Choi

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/02

Abstract: A method of fabricating a semiconductor device includes forming a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer interposed between the first and second magnetic layers, patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern, forming an insulating layer to cover the magnetic tunnel junction pattern, and performing a thermal treatment process to crystallize at least a portion of the first and second magnetic layers. The thermal treatment process may include performing a first thermal treatment process at a first temperature, after the forming of the magnetic tunnel junction layer, and performing a second thermal treatment process at a second temperature, which is higher than or equal to the first temperature, after the forming of the insulating layer.

公开(公告)号：US09343660B2

公开(公告)日：2016-05-17

申请号：US14583831

申请日：2014-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung Oh ,  Jeahyoung Lee ,  Woojin Kim ,  Junho Jeong ,  Woo Chang Lim

IPC: H01L43/08 ,  H01L43/10 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01F10/12

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

公开(公告)号：US09048417B2

公开(公告)日：2015-06-02

申请号：US14464835

申请日：2014-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung Oh ,  Jeahyoung Lee ,  Woojin Kim ,  Junho Jeong ,  Woo Chang Lim

IPC: H01L43/08 ,  H01L43/10 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01F10/12

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract translation: 提供磁存储器件。 所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。

公开(公告)号：US11784676B2

公开(公告)日：2023-10-10

申请号：US17709854

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngmin Lee ,  Woojin Kim ,  Hyoseok Na

IPC: H04B1/401 ,  H04W52/02

CPC classification number: H04B1/401 ,  H04W52/0209

Abstract: Disclosed is an electronic device including a plurality of antennas, a plurality of radio frequency circuits, a first transceiver, a second transceiver, a switching circuit configured to connect the plurality of radio frequency circuits to the first transceiver or the second transceiver, a processor, and a memory. The electronic device may be configured to switch a receiving path by connecting at least one of a plurality of receiving paths to another transceiver based on reception performance of the plurality of receiving paths.

公开(公告)号：US11522015B2

公开(公告)日：2022-12-06

申请号：US16789546

申请日：2020-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoon Bak ,  Woojin Kim ,  Junghwan Moon ,  Seowon Lee ,  Nayoung Ji

IPC: H01L27/24 ,  G11C13/00 ,  H01L27/22

Abstract: A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.

公开(公告)号：US11342495B2

公开(公告)日：2022-05-24

申请号：US16789525

申请日：2020-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Bak ,  Woojin Kim ,  Junghwan Moon

IPC: H01L43/02 ,  H01L43/12 ,  H01F10/32 ,  H01L43/10

Abstract: Magnetic memory devices may include a substrate, a metal pattern extending in a first direction on the substrate, a magnetic tunnel junction pattern on the metal pattern, and an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern. The magnetic tunnel junction pattern may include a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern.

公开(公告)号：US10032981B2

公开(公告)日：2018-07-24

申请号：US15244344

申请日：2016-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shinhee Han ,  Kiseok Suh ,  KyungTae Nam ,  Woojin Kim ,  Kwangil Shin ,  Minkyoung Joo ,  Gwanhyeob Koh

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.

公开(公告)号：US09831422B2

公开(公告)日：2017-11-28

申请号：US14919717

申请日：2015-10-21

Applicant: Samsung Electronics Co., Ltd. ,  International Business Machines Corporation

Inventor： Woojin Kim ,  Joonmyoung Lee ,  Yong Sung Park ,  Stuart S. P. Parkin

IPC: H01L29/82 ,  H01L21/06 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer. Here, the polarization enhancement layer contains cobalt, iron, and at least one of the elements of Group IV, and the polarization enhancement layer has a magnetization direction perpendicular to or substantially perpendicular to a top surface of the substrate.

公开(公告)号：US12180645B2

公开(公告)日：2024-12-31

申请号：US17661146

申请日：2022-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woojin Kim ,  Jinbaek Kim ,  Eungryeol Seo ,  Geonung Lee

IPC: D06F73/00 ,  D06F58/10 ,  A61L2/07 ,  D06F73/02

Abstract: The present disclosure relates to a clothes care apparatus. The clothes care apparatus includes a main body including a clothes care compartment, a machine compartment, a steam generator provided in the machine compartment configured to generate steam, a steam injector including a steam injection nozzle configured to receive the steam from the steam generator and inject the steam into the clothes care compartment, at least one air injection hole configured to allow air to be injected into the clothes care compartment in order to change a direction of the steam injected from the steam injector, a regulation device configured to regulate a flow rate or a wind direction of the air injected from the at least one air injection hole, and a controller configured to control the regulation device and change the direction of the steam by regulating the air injected from the at least one air injection hole.