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1.发明申请USER DEVICE HAVING A HOST FLASH TRANSLATION LAYER (FTL), A METHOD FOR TRANSFERRING AN ERASE COUNT THEREOF, A METHOD FOR TRANSFERRING REPROGRAM INFORMATION THEREOF, AND A METHOD FOR TRANSFERRING A PAGE OFFSET OF AN OPEN BLOCK THEREOF 有权具有主机闪存转换层（FTL）的用户设备，用于传输其消除计数的方法，用于传送其转发信息的方法以及用于传送其开放块的页面偏移的方法公开(公告)号：US20150143035A1
公开(公告)日：2015-05-21
申请号：US14540122
申请日：2014-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wan-Soo Choi , Jun-Ho Jang , Yonghwan Song , Min-Woo Kim , Woonjae Chung
CPC classification number: G06F3/0661 , G06F3/0619 , G06F3/0679 , G11C16/102
Abstract: A user device includes a storage device including a flash memory; and a host connected to the storage device via an interface and adapted to transmit data to the storage device. The host provides the storage device with erase count information of the flash memory using a host flash translation layer (FTL), provides the storage device with reprogram information when the flash memory uses a reprogram method, or provides the storage device with page offset information of an open block of the flash memory.
Abstract translation: 一种用户设备包括一个包括闪速存储器的存储设备; 以及经由接口连接到存储设备并适于向存储设备发送数据的主机。 主机使用主机闪存转换层（FTL）向存储设备提供闪存的擦除计数信息，当闪速存储器使用重新编程方法时向存储设备提供重新编程信息，或者为存储设备提供页面偏移信息 一个开放的闪存块。
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公开(公告)号：US10019162B2
公开(公告)日：2018-07-10
申请号：US15176140
申请日：2016-06-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bumhee Lee , Woonjae Chung
CPC classification number: G06F3/0604 , G06F3/0634 , G06F3/0688 , G06F12/0238 , G06F12/0253 , G06F12/0261 , G06F2212/1016 , G06F2212/7205
Abstract: A storage device includes one or more nonvolatile memories and a memory controller. The memory controller controls operations of the nonvolatile memories. The memory controller controls the nonvolatile memories differently based on a data amount of write data stored in the nonvolatile memories and/or read data output from the nonvolatile memories according to the operations of the nonvolatile memories during each of a plurality of power supply intervals between a point in time where power is supplied and a point in time where the supplied power is interrupted.
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公开(公告)号：US09612773B2
公开(公告)日：2017-04-04
申请号：US14540122
申请日：2014-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wan-Soo Choi , Jun-Ho Jang , Yonghwan Song , Min-Woo Kim , Woonjae Chung
CPC classification number: G06F3/0661 , G06F3/0619 , G06F3/0679 , G11C16/102
Abstract: A user device includes a storage device including a flash memory; and a host connected to the storage device via an interface and adapted to transmit data to the storage device. The host provides the storage device with erase count information of the flash memory using a host flash translation layer (FTL), provides the storage device with reprogram information when the flash memory uses a reprogram method, or provides the storage device with page offset information of an open block of the flash memory.
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