公开(公告)号：US20240332093A1

公开(公告)日：2024-10-03

申请号：US18431464

申请日：2024-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Seok PARK ,  WAN-SIK NAM ,  SOUK KIM ,  YOUNGHOON SOHN ,  JAEHYUNG AHN

IPC: H01L21/66

CPC classification number: H01L22/12

Abstract: A critical dimension prediction system includes a measuring device configured to acquire sample data from a sample semiconductor chip, the sample data including a plurality of spectrums, a training data selection device configured to select a training data set based on the sample data, a critical dimension predicting model generating device configured to generate a critical dimension predicting model by training an artificial intelligence model based on the training data set, and a critical dimension predicting device configured to predict a critical dimension of a target layer by inputting input data into the critical dimension predicting model, the input data including information about the target layer, where the training data selection device is further configured to assign a sparsity score to each of the plurality of spectrums and select at least one of the plurality of spectrums as the training data set based on the sparsity score.

公开(公告)号：US20230366853A1

公开(公告)日：2023-11-16

申请号：US18093037

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： SUNG YOON RYU ,  Donghyun LEE ,  SOOSEOK LEE ,  YOUNGHOON SOHN

IPC: G01N29/04 ,  H01L21/66 ,  G01N29/265 ,  G01N29/24

CPC classification number: G01N29/043 ,  H01L22/20 ,  G01N29/265 ,  G01N29/24 ,  G01N2291/0289

Abstract: A method of fabricating a semiconductor device may include disposing a first aperture on a surface of a substrate; positioning a first ultrasonic wave receiving probe on the surface of the substrate in the first aperture; disposing a second aperture on the surface of the substrate; positioning a second ultrasonic wave receiving probe on the surface of the substrate in the second aperture; transmitting an ultrasonic wave to the substrate; and receiving a reflection ultrasonic wave, which is reflected by a portion in the substrate. The receiving of the reflection ultrasonic wave comprises one of: receiving the reflection ultrasonic wave, which is transmitted through the first aperture, using the first ultrasonic wave receiving probe positioned on the surface of the substrate; and receiving the reflection ultrasonic wave, which is transmitted through the second aperture, using the second ultrasonic wave receiving probe positioned on the surface of the substrate. The first ultrasonic wave receiving probe and the second ultrasonic wave receiving probe are spaced apart from each other in a horizontal direction.