公开(公告)号：US20040257171A1

公开(公告)日：2004-12-23

申请号：US10825608

申请日：2004-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

IPC: H03H009/70

CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

Abstract: An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

Abstract translation: 通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。 当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。 谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。