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公开(公告)号：US11329223B2
公开(公告)日：2022-05-10
申请号：US17060884
申请日：2020-10-01
Inventor： Minhyun Lee , Seongjun Park , Hyunjae Song , Hyeonjin Shin , Kibum Kim , Sanghun Lee , Yunho Kang
IPC: H01L45/00 , H01L21/768 , G11C13/00
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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公开(公告)号：US20250107073A1
公开(公告)日：2025-03-27
申请号：US18804605
申请日：2024-08-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seran Oh , Yunho Kang , Minsik Kim , Yeonuk Kim , Byounghoon Lee , Jangeun Lee
IPC: H10B12/00 , H01L23/528 , H01L23/532
Abstract: A semiconductor device may include a substrate including a first active region defined by a first device isolation layer, a bit line contact arranged on the first active region of the substrate, and a bit line that extends in a first direction on the substrate. The bit line includes a lower conductive layer arranged on the substrate and on a sidewall of the bit line contact and a metal line stack arranged on the lower conductive layer. The metal line stack includes a first conductive layer arranged on the lower conductive layer and the bit line contact and including a first metal material, a first intermediate layer arranged on the first conductive layer and including graphene, and a second conductive layer arranged on the first intermediate layer and including the first metal material.
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公开(公告)号：US10811604B2
公开(公告)日：2020-10-20
申请号：US16144257
申请日：2018-09-27
Inventor： Minhyun Lee , Seongjun Park , Hyunjae Song , Hyeonjin Shin , Kibum Kim , Sanghun Lee , Yunho Kang
IPC: H01L45/00 , H01L21/768 , G11C13/00
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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公开(公告)号：US20190123273A1
公开(公告)日：2019-04-25
申请号：US16144257
申请日：2018-09-27
Inventor： Minhyun Lee , Seongjun Park , Hyunjae Song , Hyeonjin Shin , Kibum Kim , Sanghun Lee , Yunho Kang
IPC: H01L45/00 , H01L21/768 , G11C13/00
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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