MULTI-LEVEL RECOVERY READS FOR MEMORY
    1.
    发明申请

    公开(公告)号:US20190303236A1

    公开(公告)日:2019-10-03

    申请号:US15943456

    申请日:2018-04-02

    Abstract: Read operations are performed in a memory device which efficiently provide baseline read data and recovery read data. In one aspect, on-die circuitry, which is on a die with an array of memory cells, obtains recovery read data before it is requested or needed by an off-die controller. In another aspect, data from multiple reads is obtained and made available in a set of output latches for retrieval by the off-die controller. Read data relative to multiple read thresholds is obtained and transferred from latches associated with the sense circuits to the set of output latches. The read data relative to multiple read thresholds can be stored and held concurrently in the set of output latches for retrieval by the off-die controller.

    Multi-level recovery reads for memory

    公开(公告)号:US10908986B2

    公开(公告)日:2021-02-02

    申请号:US15943456

    申请日:2018-04-02

    Abstract: Read operations are performed in a memory device which efficiently provide baseline read data and recovery read data. In one aspect, on-die circuitry, which is on a die with an array of memory cells, obtains recovery read data before it is requested or needed by an off-die controller. In another aspect, data from multiple reads is obtained and made available in a set of output latches for retrieval by the off-die controller. Read data relative to multiple read thresholds is obtained and transferred from latches associated with the sense circuits to the set of output latches. The read data relative to multiple read thresholds can be stored and held concurrently in the set of output latches for retrieval by the off-die controller.

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