公开(公告)号：US20160059355A1

公开(公告)日：2016-03-03

申请号：US14835326

申请日：2015-08-25

Applicant: Seagate Technology LLC

Inventor： Steven A. Mastain ,  Terry A. Jacobson

IPC: B23K26/362 ,  B23K26/0622 ,  H01L21/66 ,  H01L21/268 ,  H01L21/302 ,  B23K26/00 ,  B23K26/03

CPC classification number: H01L21/302 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/361 ,  B23K2103/56 ,  H01L22/20 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: When opaque films are deposited on semi-conductor wafers, underlying features may be concealed. In accordance with one implementation, such concealed features may be re-exposed via an ablation recovery process. One ablation recovery process entails aligning an energy source with a target position on a first surface of a semiconductor wafer based on position information retrieved from a second opposite surface of the semiconductor wafer, and firing a beam of the energy source to ablate opaque material at the target position and to expose a recovery feature underlying the opaque material.

Abstract translation: 当不透明膜沉积在半导体晶片上时，潜在的特征可能被隐藏。 根据一个实施方案，这种隐藏的特征可以经由消融恢复过程再暴露。 一个消融恢复过程需要基于从半导体晶片的第二相对表面获取的位置信息将能量源与半导体晶片的第一表面上的目标位置对准，并且在该位置信号处烧制能量源的光束以在 目标位置，并暴露不透明材料的恢复功能。

公开(公告)号：US09842740B2

公开(公告)日：2017-12-12

申请号：US14835326

申请日：2015-08-25

Applicant: Seagate Technology LLC

Inventor： Steven A. Mastain ,  Terry A. Jacobson

IPC: B23K26/362 ,  B23K26/00 ,  B23K26/06 ,  B23K26/03 ,  H01L21/268 ,  H01L21/302 ,  H01L21/20 ,  B23K26/0622 ,  H01L23/544 ,  B23K26/361 ,  H01L21/66 ,  B23K103/00

CPC classification number: H01L21/302 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/361 ,  B23K2103/56 ,  H01L22/20 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: When opaque films are deposited on semi-conductor wafers, underlying features may be concealed. In accordance with one implementation, such concealed features may be re-exposed via an ablation recovery process. One ablation recovery process entails aligning an energy source with a target position on a first surface of a semiconductor wafer based on position information retrieved from a second opposite surface of the semiconductor wafer, and firing a beam of the energy source to ablate opaque material at the target position and to expose a recovery feature underlying the opaque material.