公开(公告)号：US20150333128A1

公开(公告)日：2015-11-19

申请号：US14277887

申请日：2014-05-15

Applicant: Sematech, Inc.

Inventor： Rinus LEE ,  Wei-Yip LOH ,  Robert TIECKELMANN

IPC: H01L29/207 ,  H01L29/66 ,  H01L21/324 ,  H01L29/78

CPC classification number: H01L29/207 ,  H01L21/2258 ,  H01L21/324 ,  H01L29/66477 ,  H01L29/78

Abstract: Provided are methods of fabricating a semiconductor structure. The methods include providing a III-V semiconductor substrate selected from InGaAs and InAs, introducing an n-type dopant selected from S, Se, and Te directly onto a surface of the III-V semiconductor substrate, introducing a co-dopant selected from N and P directly onto a surface of the III-V semiconductor substrate, and diffusing the n-type and co-dopant into the III-V semiconductor substrate, thereby forming an n-doped III-V semiconductor substrate containing the n-type dopant and the co-dopant. The methods produce inventive semiconductor structures, and devices that include the semiconductor structure.

Abstract translation: 提供制造半导体结构的方法。 所述方法包括提供选自InGaAs和InAs的III-V半导体衬底，将选自S，Se和Te的n型掺杂剂直接引入到III-V半导体衬底的表面上，引入选自N 和P直接在III-V半导体衬底的表面上，并将n型和辅助掺杂剂扩散到III-V半导体衬底中，从而形成含有n型掺杂剂的n掺杂III-V半导体衬底，以及 共掺杂物。 该方法产生本发明的半导体结构，以及包括半导体结构的器件。