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    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE
    3.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE 有权
    光电转换元件和成像装置

    公开(公告)号：US20170005126A1

    公开(公告)日：2017-01-05

    申请号：US15193677

    申请日：2016-06-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Riho KATAISHI ,  Hiroshi OHKI ,  Yuichi SATO ,  Daisuke MATSUBAYASHI

    IPC: H01L27/146 ,  H01L31/109 ,  H01L31/0296 ,  H01L31/0224 ,  H01L31/0272

    CPC classification number: H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14665 ,  H01L27/14694 ,  H01L27/14696 ,  H01L31/0224 ,  H01L31/022475 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109

    Abstract: An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In—Ga—Zn oxide including c-axis-aligned crystals.

    Abstract translation: 提供了具有出色成像性能的成像装置。 提供了在低照度条件下容易进行成像的成像装置。 提供了一种低功耗成像装置。 提供了其像素之间的特性变化小的成像装置。 提供了高度集成的成像装置。 光电转换元件包括第一电极和第一层，第二层和第三层。 第一层设置在第一电极和第三层之间。 第二层设置在第一层和第三层之间。 第一层含硒。 第二层含有金属氧化物。 第三层包含金属氧化物，并且还含有稀有气体原子，磷和硼中的至少一种。 硒可以是结晶硒。 第二层可以是包括c轴对准晶体的In-Ga-Zn氧化物层。

    Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Appliance
    4.
    发明申请
    Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Appliance 审中-公开
    发光元件，发光装置，照明装置和电子设备

    公开(公告)号：US20150318335A1

    公开(公告)日：2015-11-05

    申请号：US14698140

    申请日：2015-04-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Riho KATAISHI ,  Toshiki SASAKI ,  Satoshi SEO

    IPC: H01L27/32 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L29/786 ,  H01L29/24

    CPC classification number: H01L51/5092 ,  H01L27/322 ,  H01L27/323 ,  H01L27/3248 ,  H01L29/24 ,  H01L29/786 ,  H01L29/7869 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5072 ,  H01L51/5206 ,  H01L51/5234 ,  H01L2251/301 ,  H01L2251/306 ,  H01L2251/308 ,  H01L2251/5353

    Abstract: An inverted-structure light-emitting element is provided. One embodiment of the invention disclosed in this specification is a light-emitting element including a cathode, a layer serving as a buffer over the cathode, an electron-injection layer over the layer serving as a buffer, a light-emitting layer over the electron-injection layer, and an anode over the light-emitting layer. The electron-injection layer includes an alkali metal or an alkaline earth metal. The layer serving as a buffer includes an electron-transport material. In the inverted-structure light-emitting element, contact of the alkali metal or alkaline earth metal included in a material of the electron-injection layer with the already formed cathode increases the driving voltage of an EL element and reduces emission efficiency. This problem becomes prominent particularly when the cathode includes an oxide conductive film. To prevent this, the layer serving as a buffer is provided between the cathode and the electron-injection layer.

    Abstract translation: 提供了倒置结构的发光元件。 在本说明书中公开的本发明的一个实施例是一种发光元件，其包括阴极，用作阴极上的缓冲层的层，在用作缓冲层的层上的电子注入层，电子上的发光层 注射层，以及在发光层上的阳极。 电子注入层包括碱金属或碱土金属。 用作缓冲层的层包括电子传输材料。 在反转型发光元件中，包含在电子注入层的材料中的碱金属或碱土金属与已经形成的阴极的接触增加了EL元件的驱动电压并降低了发光效率。 特别是当阴极包括氧化物导电膜时，该问题变得突出。 为了防止这种情况，在阴极和电子注入层之间设置用作缓冲器的层。

    PHOTOELECTRIC CONVERSION DEVICE
    6.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 有权
    光电转换器件

    公开(公告)号：US20130119374A1

    公开(公告)日：2013-05-16

    申请号：US13657015

    申请日：2012-10-22

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Riho KATAISHI ,  Yoshinobu ASAMI

    IPC: H01L31/0264

    CPC classification number: H01L31/074 ,  H01L31/0747 ,  Y02E10/50

    Abstract: To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV.

    Abstract translation: 提供一种由窗口层中的光吸收引起的光损耗小且具有良好的电气特性的光电转换装置。 光电转换装置在一对电极之间包括具有一种导电类型并用作窗口层的透光半导体层和具有用于形成pn结的导电类型的硅半导体衬底或具有用于形成pn结的硅半导体层或具有 用于形成pin结的导电类型。 可以使用含有属于周期表第4〜8族的金属的氧化物作为其主要成分的无机化合物来形成透光性半导体层。 金属氧化物的带隙大于或等于2eV。

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