公开(公告)号：US20240185782A1

公开(公告)日：2024-06-06

申请号：US18287666

申请日：2021-06-08

Applicant: Sharp Display Technology Corporation

Inventor： Tamotsu SAKAI

IPC: G09G3/3233 ,  G09G3/3291

CPC classification number: G09G3/3233 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2310/0294 ,  G09G2310/08

Abstract: In a display device including pixel circuits including oxide TFTs, degradation in display quality caused by light irradiation onto the oxide TFTs is suppressed. A TFT having a channel region formed of silicon is adopted as a drive transistor. A TFT having a gate electrode; a first conductive electrode and a second conductive electrode that function as a drain electrode and a source electrode; a back-gate electrode; and a channel region formed of an oxide semiconductor is adopted as a threshold voltage compensation transistor. A second conductive electrode of the drive transistor is connected to the first conductive electrode of the threshold voltage compensation transistor, and a gate electrode of the drive transistor is connected to the second conductive electrode of the threshold voltage compensation transistor. Silicon connected to the second conductive electrode of the drive transistor is used as the back-gate electrode of the threshold voltage compensation transistor.

公开(公告)号：US20250056987A1

公开(公告)日：2025-02-13

申请号：US18721878

申请日：2022-02-16

Applicant: Sharp Display Technology Corporation

Inventor： Tamotsu SAKAI

IPC: H10K59/131 ,  H10K59/123

Abstract: A third TFT is provided with a third semiconductor layer in which a fifth conductor region, a sixth conductor region, and a third channel region are defined, and which is formed by a second semiconductor film made of an oxide semiconductor, with a fourth gate electrode provided on the third semiconductor layer via a fourth inorganic insulating film so as to overlap with the third channel region, and with a fifth gate electrode provided on a base substrate side of the third semiconductor layer via a second inorganic insulating film and a third inorganic insulating film so as to overlap with the third channel region.