公开(公告)号：US20240194432A1

公开(公告)日：2024-06-13

申请号：US18541461

申请日：2023-12-15

Applicant: Solaredge Technologies Ltd.

Inventor： Israel Gershman ,  Yoav Galin ,  David Lachmann ,  Bahat Shafat ,  Matan Zehavi

IPC: H01H85/055 ,  H01B17/58 ,  H01H85/06 ,  H01H85/08

CPC classification number: H01H85/055 ,  H01B17/58 ,  H01H85/06 ,  H01H85/08

Abstract: Systems, apparatuses, and methods are described for thermal fuse circuit breakers. The thermal fuses described herein may be disposed in a connector, so that, should an overheating condition occur, for example, due to an arc discharge across or inside of the connector, the heat of the arc discharge melts a portion of the fuse, thereby preventing a potentially catastrophic event, such as fire, or damage to a component which may be more expensive than the thermal fuse itself.

公开(公告)号：US11881371B2

公开(公告)日：2024-01-23

申请号：US17506546

申请日：2021-10-20

Applicant: Solaredge Technologies Ltd.

Inventor： Israel Gershman ,  Yoav Galin ,  David Lachmann ,  Bahat Shafat ,  Matan Zehavi

IPC: H01H85/055 ,  H01B17/58 ,  H01H85/06 ,  H01H85/08

CPC classification number: H01H85/055 ,  H01B17/58 ,  H01H85/06 ,  H01H85/08

Abstract: Systems, apparatuses, and methods are described for thermal fuse circuit breakers. The thermal fuses described herein may be disposed in a connector, so that, should an overheating condition occur, for example, due to an arc discharge across or inside of the connector, the heat of the arc discharge melts a portion of the fuse, thereby preventing a potentially catastrophic event, such as fire, or damage to a component which may be more expensive than the thermal fuse itself.

公开(公告)号：US20220416067A1

公开(公告)日：2022-12-29

申请号：US17847724

申请日：2022-06-23

Applicant: Solaredge Technologies Ltd.

Inventor： Tal Havdala ,  Daniel Levi ,  David Ben-Bassat ,  Matan Zehavi ,  Bryon Roos Gomberg

IPC: H01L29/772 ,  H01L29/40

Abstract: A transistor comprises a semiconductor substrate and a barrier metal layer forming a Schottky barrier. One or more insulated gates may be positioned adjacent to an edge of the Schottky barrier. By applying a reverse bias voltage between the semiconductor substrate and the barrier metal, and applying a gate voltage between the one or more insulated gates and the barrier metal, a reverse bias current may be increased to a reverse bias conducting state. When the gate voltage is sufficient, the transistor may conduct current between the semiconductor substrate and the barrier metal. For example, voltages may be applied to an n-type substrate and an insulated gate (both relative to the barrier metal), and a current may flow from the semiconductor substrate to the barrier metal. The transistor may operate as a switch, a filter, a rectifier, an oscillator, or an amplifier.