公开(公告)号：US20240087979A1

公开(公告)日：2024-03-14

申请号：US18511390

申请日：2023-11-16

Applicant: Solid-tech Co., Ltd.

Inventor： Tzu Chien Hung ,  Chun-Teng Ko ,  Bomin Tu ,  Zhengyu Lee

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/00 ,  H01L23/13

CPC classification number: H01L23/3735 ,  H01L21/4846 ,  H01L23/13 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/32238 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/12042 ,  H01L2924/13055

Abstract: This invention provides a carrier or submount for high power devices packaging and a method for forming the carrier or submount. The carrier comprises a thermal conductive ceramic substrate with at least one recess region, a patterned adhesion layer on the substrate, a heat dissipation layer on the patterned adhesion layer, a conformal cover layer enclosing the heat dissipation layer and the adhesion layer, a diffusion barrier layer on the conformal cover layer, and an eutectic bonding layer on the diffusion barrier layer. The substrate includes a first region for bonding high power device, a second region for wire-bonding, and a third region for heat sink. The first region and second region are on a first surface of the substrate, and the third region is one the second surface, opposite to the first surface, of the substrate.

公开(公告)号：US20240120244A1

公开(公告)日：2024-04-11

申请号：US18511421

申请日：2023-11-16

Applicant: Solid-tech Co., Ltd.

Inventor： Tzu Chien HUNG ,  Chun-Teng Ko ,  Bomin Tu ,  Zhengyu Lee

IPC: H01L23/15 ,  H01L23/31

CPC classification number: H01L23/15 ,  H01L23/31

Abstract: This invention provides a carrier or submount for high power devices packaging and a method for forming the carrier or submount. The carrier comprises a thermal conductive ceramic substrate, a patterned adhesion layer on the substrate, a heat dissipation layer on the patterned adhesion layer, a conformal cover layer enclosing the heat dissipation layer and the adhesion layer, a lateral heat dissipation layer on the substrate and between the cover layer on the first region and the cover layer on the second region, a diffusion barrier layer on the conformal cover layer, and an eutectic bonding layer on the diffusion barrier layer. The substrate includes a first region for bonding high power device, a second region for wire-bonding, and a third region for heat sink. The first region and second region are on a first surface of the substrate, and the third region is one the second surface, opposite to the first surface, of the substrate.