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公开(公告)号：US20250006793A1
公开(公告)日：2025-01-02
申请号：US18709543
申请日：2022-10-28
Applicant: Soochow University
Inventor： Mingxiang Wang , Huifang Xu , Guoao Zhou , Dongli Zhang , Huaisheng Wang
Abstract: The present invention discloses a field effect transistor device with a blocking region, which aims to address the problem of short channel effects of a field effect transistor in the prior art. The field effect transistor device includes an active layer, the active layer including a source region, a drain region and a channel region located between the source region and the drain region, wherein the channel region is provided with a carrier blocking region. The carrier blocking region serves to block carriers moving from the source region to the drain region when the device is turned off.
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公开(公告)号：US20240304729A1
公开(公告)日：2024-09-12
申请号：US17997556
申请日：2021-12-01
Applicant: Soochow University
Inventor： Mingxiang Wang , Lekai Chen , Dongli Zhang , Huaisheng Wang
IPC: H01L29/786 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/775 , H01L29/778
CPC classification number: H01L29/78696 , H01L29/0673 , H01L29/41733 , H01L29/42392 , H01L29/775 , H01L29/7786
Abstract: The present invention discloses a field effect transistor device for improving the problem of the short-channel effect of a field effect transistor in the prior art, comprising: an active layer, comprising a source region, a drain region, and a channel region located between the source region and the drain region; a gate provided around the channel region; and a gate insulating layer provided between the gate and the channel region; wherein when a device is turned on, an effective channel, and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region and the drain region through the effective channel, and the equivalent source and/or equivalent drain to contribute an operating current.
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公开(公告)号：US20230120523A1
公开(公告)日：2023-04-20
申请号：US17905367
申请日：2020-05-26
Applicant: Soochow University
Inventor： Mingxiang Wang , Jinfeng Zhao , Dongli Zhang , Huaisheng Wang
IPC: H01L29/78
Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.
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公开(公告)号：US11908935B2
公开(公告)日：2024-02-20
申请号：US17905367
申请日：2020-05-26
Applicant: Soochow University
Inventor： Mingxiang Wang , Jinfeng Zhao , Dongli Zhang , Huaisheng Wang
IPC: H01L29/78
CPC classification number: H01L29/7838 , H01L29/7839
Abstract: The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.
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5.发明公开公开(公告)号：US20230223466A1
公开(公告)日：2023-07-13
申请号：US17997200
申请日：2021-12-01
Applicant: Soochow University
Inventor： Mingxiang Wang , Lekai Chen , Dongli Zhang , Huaisheng Wang
IPC: H01L29/778 , H01L29/40
CPC classification number: H01L29/7781 , H01L29/408 , H01L29/7788
Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.
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Patent Agency Ranking
公开(公告)号：US20210405107A1
公开(公告)日：2021-12-30
申请号：US16959633
申请日：2019-06-10
Applicant: Soochow University
Inventor： Mingxiang Wang , Yanyan Chen , Dongli Zhang , Huaisheng Wang
IPC: G01R31/26
Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.
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公开(公告)号：US12279443B2
公开(公告)日：2025-04-15
申请号：US17997200
申请日：2021-12-01
Applicant: Soochow University
Inventor： Mingxiang Wang , Lekai Chen , Dongli Zhang , Huaisheng Wang
Abstract: The present invention provides a field effect transistor device and a method for improving the short-channel effect and the output characteristics using the same. The field effect transistor device comprises an active layer comprising a source region, a drain region, and a channel region located between the source region and the drain region; when the device is turned on, an effective channel and an equivalent source and/or equivalent drain away from the effective channel are formed in the channel region, and the field effect transistor device connects the source region with the drain region through the effective channel, and the equivalent source and/or equivalent drain to form an operating current.
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公开(公告)号：US20240371937A1
公开(公告)日：2024-11-07
申请号：US18684734
申请日：2022-10-27
Applicant: Soochow University
Inventor： Mingxiang Wang , Yeye Guo , Lekai Chen , Dongli Zhang , Huaisheng Wang
IPC: H01L29/08 , H01L29/423 , H01L29/47 , H01L29/778 , H01L29/78
Abstract: The present invention discloses an equivalent source and drain region optimized field-effect transistor device for solving the problem of short-channel effects of a field-effect transistor in the prior art. The field-effect transistor device includes an active layer, and the active layer includes a source region, a drain region and a channel region located between the source region and the drain region; when the device is on, an effective channel and an equivalent source region and an equivalent drain region away from the effective channel at least in the thickness direction of the channel region are formed in the channel region, and the field-effect transistor device communicates the source region and the drain region via the effective channel and the equivalent source region and the equivalent drain region to contribute a working current, wherein the length of the equivalent source region is greater than that of the equivalent drain region.
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公开(公告)号：US11474011B2
公开(公告)日：2022-10-18
申请号：US16960586
申请日：2018-01-17
Applicant: SOOCHOW UNIVERSITY
Inventor： Mingxiang Wang , Wei Jiang , Dongli Zhang , Huaisheng Wang , Ming Wu , Nannan Lv
Abstract: The present invention discloses a bending test apparatus and method for a flexible sheet material. The apparatus comprises a mounting table and further comprises a clamping unit and a bending shaft unit. The clamping unit comprises a clamping part. The bending shaft unit comprises a bending shaft extending in a Z-axis direction. The bending shaft has an arc-shaped sidewall for abutting against a flexible sheet material at an end thereof away from the clamping part. The clamping part moves relative to the bending shaft in a Y-axis direction. The present invention has the following advantage: During a test, a flexible sheet material is bent with a lower external strain, has a wide adjustment curvature range, and the structure is optimized.
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公开(公告)号：US11442097B2
公开(公告)日：2022-09-13
申请号：US16959633
申请日：2019-06-10
Applicant: Soochow University
Inventor： Mingxiang Wang , Yanyan Chen , Dongli Zhang , Huaisheng Wang
Abstract: The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.
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