公开(公告)号：US20230098095A1

公开(公告)日：2023-03-30

申请号：US17889703

申请日：2022-08-17

Applicant: South China Normal University

Inventor： Wei GAO ,  Ying HUANG ,  Mengmeng YANG ,  Jingbo LI

IPC: H01L31/109 ,  H01L31/0232 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18

Abstract: The present disclosure provides a photodiode based on a stannous selenide sulfide nanosheet/GaAs heterojunction and a preparation method and use thereof. The photodiode comprises a structure of the stannous selenide sulfide nanosheet/GaAs heterojunction, forming Au electrodes through thermal vapor deposition on the stannous selenide sulfide nanosheet and GaAs, respectively, and conducting an annealing treatment in a protective gas at a temperature in a range of 150-250° C. The heterojunction is formed by transferring the stannous selenide sulfide nanosheet to a GaAs window, and the GaAs window is obtained by depositing a medium layer film on GaAs and etching the medium layer through lithography and an etchant.