公开(公告)号：US20170363413A1

公开(公告)日：2017-12-21

申请号：US15534550

申请日：2015-12-11

Applicant: SunEdison Semiconductor Limited

Inventor： Benno ORSCHEL ,  Andrey MELNIKOV ,  John F. VALLEY ,  Markus Jan Peter SIEGERT

IPC: G01B9/02 ,  G01B11/24 ,  G01N21/95

CPC classification number: G01B9/02077 ,  G01B9/02004 ,  G01B9/02005 ,  G01B9/0201 ,  G01B9/02083 ,  G01B11/2441 ,  G01N21/9501

Abstract: A method performs phase shift interferometry to detect irregularities of a surface of a wafer after the wafer has been placed into an interferometer and while the wafer is vibrating. Additionally, a system and a non-transitory computer-readable storage medium have computer-executable instructions embodied thereon for performing phase shift interferometry to detect irregularities of a surface of a wafer after the wafer has been placed into an interferometer and while the wafer is vibrating.