公开(公告)号：US20240250048A1

公开(公告)日：2024-07-25

申请号：US18561435

申请日：2022-03-25

Applicant: TDK CORPORATION

Inventor： Kosuke TANAKA ,  Masato SATO ,  Kenta ONO ,  Takashi WATANABE

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L24/05 ,  H01L23/291 ,  H01L23/3171 ,  H01L24/03 ,  H01L23/293 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/05007 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2924/365 ,  H01L2924/381

Abstract: In the electronic component, the second portion of the diffusion prevention layer extends parallel to the main surface of the base material. When the electronic component is surface-mounted on the mounting substrate, the conductive bonding material such as solder is interposed between the electrodes of the electronic component and the land electrodes of the mounting substrate. In the case that the bonding surface between the diffusion prevention layer and the substrate is wide, it is difficult for the metal component of the bonding material to reach the body portion of the electrodes through the bonding surface. Therefore, a situation in which metal component of the bonding material diffuse into the body portion is suppressed, and a decrease in strength of the electrodes due to the diffusion is suppressed.

公开(公告)号：US20240250215A1

公开(公告)日：2024-07-25

申请号：US18561449

申请日：2022-03-25

Applicant: TDK CORPORATION

Inventor： Kosuke TANAKA ,  Masato SATO ,  Kenta ONO ,  Susumu TANIGUCHI

IPC: H01L33/38 ,  H01S5/042

CPC classification number: H01L33/382 ,  H01S5/04256 ,  H01L2933/0016

Abstract: In the semiconductor element, a second electrode is higher than a first electrode, and the first electrode and the second electrode have substantially the same height positions of the upper surfaces. In the semiconductor element, since the first electrode and the second electrode can be formed at the same time, it is possible to form the semiconductor element including the first electrode and the second electrode by a small number of processes.