Abstract:
A glass ceramic composition of the present invention includes a main component composed of a first glass, a second glass, Al2O3, and SiO2. The first glass is SiO2—K2O—B2O3 based glass. The second glass is MO—SiO2—Al2O3—B2O3 based glass (“M” is an alkaline-earth metal) and/or CaO—SiO2—Al2O3—ZnO—ZrO2—B2O3 based glass. In case that the total amount of the main component is 100 wt %, the main component contains the second glass of 12 to 30 wt %, the first and second glass of 40 to 56 wt % in total, and further Al2O3 of 7 to 18 wt %.
Abstract translation:本发明的玻璃陶瓷组合物包括由第一玻璃,第二玻璃,Al 2 O 3和SiO 2构成的主要成分。 第一块玻璃是SiO2-K2O-B2O3基玻璃。 第二玻璃是MO-SiO2-Al2O3-B2O3基玻璃(“M”是碱土金属)和/或CaO-SiO2-Al2O3-ZnO-ZrO2-B2O3基玻璃。 在主成分的总量为100重量%的情况下,主成分含有12〜30重量%的第二玻璃,第一玻璃和第二玻璃的总量为40〜56重量%,进一步为7〜18的Al 2 O 3 重量%。
Abstract:
An electro-optical component includes: a single crystal substrate; an optical waveguide made of a dielectric thin film formed in contact with a main surface of the single crystal substrate; and an electrode configured to apply voltage to the optical waveguide, wherein the dielectric thin film is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, and a c-axis length of the lithium niobate film is 13.88 Å or more.
Abstract:
An electro-optical component includes: a single crystal substrate; an optical waveguide comprising a dielectric thin film formed in contact with the main surface of the single crystal substrate; and an electrode configured to apply voltage to the optical waveguide, wherein the dielectric thin film is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, and an X-ray intensity ratio (LiNb3O8(60−2)/LiNbO3(006)) of LiNb3O8 to LiNbO3 is 0.02 or more.
Abstract:
In order to provide a dielectric ceramic composition capable of sintering at a low temperature, implementing a low relative dielectric constant, providing other excellent properties (such as a relative density and an insulation resistance), performing co-firing of different materials, and suppressing dispersion of Ag in the sintered body when the internal electrode is formed, the dielectric ceramic composition includes a main ingredient containing SiO2—K2O—B2O3-based glass of 40 to 65 weight %, quartz of 35 to 50 weight %, and amorphous silica of remaining weight %; and a subsidiary ingredient containing alumina of 1.5 to 4 weight %, K2O-MO—SiO2—B2O3-based glass (where “MO” denotes at least any one selected from a group consisting of CaO and SrO) of 5 to 20 weight % relative to the main ingredient of 100 weight %.
Abstract:
A substrate with a dielectric thin film includes: a single crystal substrate; and a dielectric thin film formed in contact with a main surface of the single crystal substrate, wherein the dielectric thin film has a thickness of 0.5 μm to 2 μm and is made of a lithium niobate film that is an epitaxial film with a c-axis orientation, the dielectric thin film has a twin crystal structure of LiNbO3 of a first crystal and a second crystal corresponding to a crystal in which the first crystal is rotated 180° around the c-axis, the first crystal and the second crystal in an upper region of the dielectric thin film, excluding a lower region from the single crystal substrate to half of a thickness direction in the dielectric film, have maximum domain widths of 80 nm to 300 nm.
Abstract:
A glass ceramics sintered body includes a glass phase and a ceramics phase dispersed in the glass phase. The ceramics phase includes alumina grains and zirconia grains. The glass phase includes an MO—Al2O3—SiO2—B2O3 based glass, where M is an alkaline earth metal. An area ratio of the alumina grains is 13 to 30%, and an area ratio of the zirconia grains is 0.05 to 6%, on a cross section of the sintered body.
Abstract:
A substrate with a dielectric thin film 1 includes a single-crystal substrate, a stress relaxation layer, and a dielectric thin film, in which the stress relaxation layer is made of a c-axis-oriented epitaxial film, and includes a twin crystal structure of LiNbO3 including a first and a second crystal existing at a position obtained by rotating the first crystal 180° about a c-axis and a LiNb3O8 phase, the dielectric thin film is made of a lithium niobate film which is a c-axis-oriented epitaxial film, has the twin crystal structure of LiNbO3, has a film thickness of 0.5 μm to 2 μm, and has a maximum domain width greater than a maximum domain width of the stress relaxation layer, and a percentage of a film thickness of the stress relaxation layer to the film thickness of the dielectric thin film is 5% to 25%.
Abstract:
An optical modulator is provided with an optical waveguide, an electrode provided opposite to the optical waveguide, and a buffer layer provided between the optical waveguide and the electrode. A main material of the buffer layer is lanthanum fluoride.
Abstract:
A laminated coil component includes an element assembly formed by laminating a plurality of insulation layers and a coil unit formed inside the element assembly by a plurality of coil conductors. The element assembly includes a coil unit arrangement layer which has the coil unit arranged therein, and at least a pair of shape retention layers which is provided to have the coil unit arrangement layer interposed therebetween to retain a shape of the coil unit arrangement layer. The shape retention layer is made from glass-ceramic containing SrO, and a softening point of the coil unit arrangement layer is lower than a softening point or a melting point of the shape retention layer.
Abstract:
Provided is a glass ceramics sintered body including a glass phase and a ceramics phase dispersed in the glass phase, in which the ceramics phase includes alumina grains and zirconia grains, the glass phase includes an MO-Al2O3—SiO2—B2O3 based glass, in which “M” is an alkaline earth metal, and an area ratio of the alumina grains is 0.05 to 12% and the area ratio of the zirconia grains is 0.05 to 6% on the cross section of the sintered body. According to the invention, a glass ceramics sintered body, capable of a low temperature sintering having a low dielectric constant and a sufficient strength, and a coil electronic component using thereof can be provided.