公开(公告)号：US3817799A

公开(公告)日：1974-06-18

申请号：US22635072

申请日：1972-02-14

Applicant: TELEFUNKEN PATENT

Inventor： SCHUTZE H ,  HENNINGS K

IPC: H01L21/60 ,  H01L21/74 ,  H01L21/762 ,  H01L25/16 ,  H01L27/00 ,  H01L7/50

CPC classification number: H01L24/80 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76289 ,  H01L21/76297 ,  H01L25/165 ,  H01L27/00 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12042 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/135 ,  H01L2924/00

Abstract: A SOLID STATE CIRCUIT ARRANGEMENT HAVING A SEMICONDUCTOR MEMBER AND PRESENTING REDUCED SHUNT CAPACITANES AS THE RESULT OF THE ISLATION OF VARIOUS REGIONS OF THE MEMBER FROM EACH OTHER, AND A METHOD FOR FABRICATING WITH ARRANGEMENT BY FORMING A SUBASSEMBLY OF TWO MEMBERS, CONSTITUTED BY A FIRST INSULATING LAYER AND THE SEMICONDUCTOR MEMBER, BY DEPOSITING ONE OF THE MEMBERS ON THE SURFACE OF THE OTHER THEREOF, DEPOSITING A SECOND INSULATING LAYER ON THE SIDE OF THE SEMICONDUCTOR MEMBER WHICH IS OPPOSITE FROM THE SURFACE UPON WHICH THE FIRST LAYER BEARS, FORMING APERTURES IN AT LEAST ONE OF THE INSULATING LAYERS TO EXPOSE SURFACE PORTIONS OF THE SEMICONDUCTOR MEMBER, AND ETCHING OUT THE PORTIONS OF THE SEMICONDUCTOR MEMBER IN THE REGION OF EACH APERTURE TO CREATE CAVITIES WHICH EXTEND FROM ONE OF THE INSULATING LAYERS TO THE OTHER.

公开(公告)号：US3719487A

公开(公告)日：1973-03-06

申请号：US3719487D

申请日：1970-09-16

Applicant: TELEFUNKEN PATENT

Inventor： SCHUTZE H ,  HENNINGS K

IPC: G03F9/00 ,  G03C5/04

CPC classification number: G03F9/70

Abstract: A PHOTOGRAPHIC PROCESS FOR PRODUCING MICROSTRUCTURES, I.E., STRUCTURES WITH MICRON OR SUBMICRON DIMENSIONS, ON A SUBSTRATUM IN ALIGNMENT WITH EACH OTHER. AFTER A FIRST MICROSTRUCTURE HAS BEEN APPLIED TO THE SUBSTRATUM, AN IMAGE OF THE FIRST MICROSTRUCTURE IS FORMED THROUGH A LENS, AND A PHOTOMASK OF A SECOND MICROSTRUCTURE IS ALIGNED WITH THE FIRST MICROSTRUCTURE IN THE PLANE OF THE FIRST MICROSTRUCTURES''S IMAGE. THE SECOND MICROSTRUCTURE IS THEN IMAGED THROUGH THE LENS ONTO A LIGHT-SENSITIVE LAYER ON THE SUBSTRATUM TO PRODUCE THE SECOND MICROSTRUCTURE ON THE SUBSTRATUM IN ALIGNMENT WITH THE FIRST MICROSTRUCTURE.

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