公开(公告)号：US3747562A

公开(公告)日：1973-07-24

申请号：US3747562D

申请日：1971-05-28

Applicant: TEXAS INSTRUMENTS INC

Inventor： STONE L ,  ROMANO R

IPC: C30B19/06 ,  B05C3/09 ,  H01L7/38 ,  H01L7/46

CPC classification number: C30B19/063

Abstract: An improved furnace boat has been developed for the epitaxial solution growth of III-V compounds. The boat comprises one or more closed compartments wherein the growth solution or solutions are located, in combination with a sliding substrate support member at the base of the solution compartments, such that the substrate wafer can be moved quickly and easily into contact with, or out of contact with, the growth solution. The technique permits optimum surface protection of the substrate prior to immersion, removal of the slice at any time increment of the growth and/or cooling cycle, and will ensure complete removal of gallium solution from the grown surface without damage to the surface.

Abstract translation: 已经开发了用于III-V化合物的外延溶液生长的改进的炉船。 船包括一个或多个封闭隔室，其中生长溶液或溶液与溶液隔室底部的滑动基底支撑构件组合，使得基底晶片能够快速且容易地移动或接触或移出 的接触，成长的解决方案。 该技术允许在浸渍之前对衬底进行最佳表面保护，在生长和/或冷却循环的任何时间增加时去除切片，并且将确保从生长的表面完全去除镓溶液而不损坏表面。

公开(公告)号：US3785885A

公开(公告)日：1974-01-15

申请号：US3785885D

申请日：1970-03-24

Applicant: TEXAS INSTRUMENTS INC

Inventor： STONE L

IPC: C30B19/00 ,  C30B9/06 ,  C30B19/04 ,  C30B19/06 ,  C30B29/40 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B9/06 ,  C30B19/06

Abstract: The epitaxial solution growth of ternary III-V compounds, including gallium aluminum arsenide, for example, is controlled to accomplish uniform composition over extended growth periods. In a system comprising (1) a binary III-V compound substrate, (2) a solution of the ternary compound in the Group III element of the substrate, saturated with respect to the substrate compound, and (3) a solid source of the ternary compound in contact with the solution a short distance from the substrate, the necessary control is achieved by maintaining the substrate at least about 5* cooler than the solid source material spaced therefrom.