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1.Method for etching single crystal silicon substrates and depositing silicon thereon 失效
Title translation: 蚀刻单晶硅基板和沉积硅的方法公开(公告)号:US3501336A
公开(公告)日:1970-03-17
申请号:US3501336D
申请日:1967-12-11
Applicant: TEXAS INSTRUMENTS INC
Inventor: DYER LAWRENCE D , BRACKEN RONALD C , TAYLOR GUY W
CPC classification number: C30B29/06 , C30B33/12 , Y10S148/007 , Y10S148/051 , Y10S148/054 , Y10S438/974