公开(公告)号：US20170373246A1

公开(公告)日：2017-12-28

申请号：US15633653

申请日：2017-06-26

Applicant: THE ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONA

Inventor： Weigang WANG ,  Hamid ALMASI

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01F10/32

CPC classification number: H01L43/02 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A perpendicular magnetic tunnel junction device (pMTJ) is provided that has a structure of a first heavy metal layer, a first thin dusting layer on the first heavy metal layer, a first CoFeB layer on the thin dusting layer, a MgO barrier layer on the first CoFeB layer, a second CoFeB layer on the MgO barrier layer, a second thin dusting layer on the CoFeB layer; and a second heavy metal layer on the thin dusting layer. The insertion of the thin dusting layer improves thermal stability of the pMTJ structure.