公开(公告)号：US20200043971A1

公开(公告)日：2020-02-06

申请号：US16339438

申请日：2016-10-07

Applicant: TOHOKU UNIVERSITY

Inventor： Shigetoshi SUGAWA ,  Rihito KURODA ,  Shunichi WAKASHIMA

IPC: H01L27/146 ,  H04N5/3745 ,  H01L29/78 ,  H04N5/378

Abstract: One of the problems addressed by the present invention is to provide an optical sensor, a solid-state imaging device, and a signal readout method drive therefor that greatly contribute to a further development of industry and to the realization of a more secure and safe society. One of the solutions provided by the present invention is an optical sensor comprising a light reception element, a storage capacitor for storing charges, and a transfer switch for transferring, to the storage capacitor, a charge generated by light input into the light reception element. The storage capacitor includes a floating diffusion capacitor and a lateral overflow integration capacitor. The transfer switch is an LDD-MOS transistor of which a drain area has a specific impurity concentration.

公开(公告)号：US20220011255A1

公开(公告)日：2022-01-13

申请号：US17358292

申请日：2021-06-25

Applicant: OHT Inc. ,  TOHOKU UNIVERSITY

Inventor： Toshiro YASUDA ,  Kazutoshi KAMIBAYASHI ,  Shigetoshi SUGAWA ,  Rihito KURODA ,  Tetsuya GOTO

IPC: G01N27/24

Abstract: A capacitive sensor includes a sensing electrode, a first electrode pad, a substrate, and a second electrode pad. The sensing electrode outputs a signal corresponding to a capacitance between the sensing electrode and a detection target. The first electrode pad is coupled to the sensing electrode. The substrate includes a substrate surface portion and a step portion. On the substrate surface portion are the sensing electrode and the first electrode pad mounted. The step portion is provided at a position in the substrate lower than the substrate surface portion. The second electrode pad is mounted on the step portion and coupled to an external line.

公开(公告)号：US20240175774A1

公开(公告)日：2024-05-30

申请号：US18282885

申请日：2022-02-28

Applicant: TOHOKU UNIVERSITY ,  FUJIKIN INCORPORATED

Inventor： Shigetoshi SUGAWA

IPC: G01L9/00

CPC classification number: G01L9/0072

Abstract: [Problem] An electrostatic capacitive pressure sensor capable of detecting a pressure of a fluid with high accuracy, capable of miniaturization, and having a wider pressure detection range, and a pressure detection method using the same.
[Solution] The electrostatic capacitive pressure sensor comprises: a reference chamber provided between a fixed electrode and a movable electrode that deflects in accordance with fluid pressure; a measurement chamber filled with a fluid for causing deflection of the movable electrode; a means for sequentially applying a first potential and a second potential to the fixed electrode and generating a first output signal corresponding to the first potential and a second output signal corresponding to the second potential; and a means for generating a difference signal between the first output signal and the second output signal.

公开(公告)号：US20200028009A1

公开(公告)日：2020-01-23

申请号：US16476189

申请日：2017-01-10

Applicant: TOHOKU UNIVERSITY

Inventor： Shigetoshi SUGAWA ,  Rihito KURODA

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/068

Abstract: To provide a solar battery that is not affected or substantially not easily affected by an irradiation history of UV light, and thus does not or substantially does not suffer degradation of service life. The above-described problem is solved by a solar battery (100, 200, 200B) provided with a UV degradation preventing layer (109, 205, 205B) under specific conditions as a layer component. The UV deterioration preventing layer (109, 205, 205B) has a layer thickness (d1+d2) within a range of 2 to 60 nm, and contains semiconductor impurities contributing to a semiconductor polarity distributed in concentration in a layer thickness direction and having a maximum value (CDMax) of the concentration distribution in an interior thereof. The maximum value (CDMax) is within a range of 1×1019/cm3≤Maximum value (CDMax)≤4×1020/cm3 . . . Formula (1), and has a half value (b1) at a depth position (A1) from a surface on a light incident side of the UV deterioration preventing layer. The depth position (A1) is within a range of Depth position (A0) of Maximum value (CDMax)

公开(公告)号：US20210217801A1

公开(公告)日：2021-07-15

申请号：US17267980

申请日：2018-08-23

Applicant: TOHOKU UNIVERSITY

Inventor： Shigetoshi SUGAWA ,  Rihito KURODA

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/353

Abstract: [Problem] To provide an optical sensor which can read out faster and requires lower power consumption than conventional optical sensors while maintaining advantages and superiorities of conventional optical sensors in which a transfer switch is provided between a light receiving element (PD) and a floating diffusion (CFD).
[Solution] A semiconductor junction of a light-receiving element is fully depleted and a potential curve of electrons has a negative slope toward the floating diffusion and connected to an uppermost position of an electronic potential well of the floating diffusion keeping its negative slope state.

公开(公告)号：US20170176248A1

公开(公告)日：2017-06-22

申请号：US15300025

申请日：2014-03-31

Applicant: TOHOKU UNIVERSITY

Inventor： Shigetoshi SUGAWA ,  Rihito KURODA

IPC: G01J1/42 ,  H01L27/144 ,  H01L31/09 ,  G01J1/16

CPC classification number: G01J1/429 ,  G01J1/1626 ,  H01L27/142 ,  H01L27/1443 ,  H01L31/09 ,  Y02E10/50

Abstract: Provided is a solid-state light-receiving device for ultraviolet light, which is capable of measuring an irradiation amount of UV-rays, which are harmful to a human body, accurately and appropriately with a simple structure, and of being formed easily and integrally with sensors of peripheral circuits, and which is small, lightweight, low cost, and suitable for mobile or wearable applications. The solid-state light-receiving device for ultraviolet light includes a first photodiode, a second photodiode, and a differential circuit to which signals based on outputs of those photodiodes are input. The solid-state light-receiving device for ultraviolet light also includes semiconductor layer regions, which are formed in and on the above-mentioned photodiodes, and each of which includes a highest concentration position of semiconductor impurities.

公开(公告)号：US20160076939A1

公开(公告)日：2016-03-17

申请号：US14937095

申请日：2015-11-10

Applicant: National University Corporation Tohoku University

Inventor： Shigetoshi SUGAWA ,  Rihito KURODA

IPC: G01J3/28 ,  H01L27/144 ,  H01L31/103

CPC classification number: G01J3/2803 ,  G01J3/2823 ,  G01J2003/2813 ,  H01L27/1446 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/02363 ,  H01L31/06 ,  H01L31/103 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulation film layer, and is smaller than a penetration depth of ultraviolet light.

Abstract translation: 提供了在其表面上具有高浓度层的光电二极管，其中形成高浓度层，使得非耗尽区的厚度大于硅与绝缘膜层之间的界面的粗糙度，以及 小于紫外线的穿透深度。

公开(公告)号：US20210293866A1

公开(公告)日：2021-09-23

申请号：US17203928

申请日：2021-03-17

Applicant: TOHOKU UNIVERSITY ,  OHT Inc.

Inventor： Shigetoshi SUGAWA ,  Rihito KURODA ,  Tetsuya GOTO ,  Hiroshi HAMORI ,  Shinichi MURAKAMI ,  Toshiro YASUDA

IPC: G01R27/26 ,  G01D5/241 ,  H03K17/955

Abstract: A capacitance detection area sensor includes capacitance sensor elements arranged in a two-dimensional array, is shaped into an appropriate shape, and capacitively coupled to an external electrode. To the external electrode, a sensing signal having a potential difference is supplied. The first and second sensor output signals are acquired from a capacitance sensor element capacitively coupled to the external electrode, at the timing of the sensing signal being a first signal and being a second signal, respectively. A differential signal is generated from a difference between the acquired first and second sensor output signals, and an image indicating the shape of the external electrode is generated based on the level of the differential signal, in different colors or different tones.

公开(公告)号：US20200177831A1

公开(公告)日：2020-06-04

申请号：US16615647

申请日：2018-04-23

Applicant: TOHOKU UNIVERSITY

Inventor： Shigetoshi SUGAWA ,  Rihito KURODA

IPC: H04N5/378 ,  H04N5/372 ,  G01J1/46

Abstract: A light-receiving device that achieves both high saturation performance and high sensitivity performance includes a light-receiving pixel including a light-receiving element, a first capacitive element that accumulates a photoelectric charge produced by light received by the light-receiving element, a second capacitive element that accumulates a transferred portion of an amount of the photoelectric charge accumulated in the capacitive element, a switch means for turning on and off a photoelectric charge transfer operation from the capacitive element to the capacitive element, a resetting switch means for resetting the capacitive element and the capacitive element, a pixel selecting switch means, and a source follower switch means. An effective saturation capacity of the capacitive element is 10 to 5,000 times an effective saturation capacity of the capacitive element.