公开(公告)号：US20200052021A1

公开(公告)日：2020-02-13

申请号：US16655357

申请日：2019-10-17

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Satoshi TAKAHASHI

IPC: H01L27/146 ,  H01L21/3065

Abstract: A solid-state imaging device including a semiconductor substrate including photoelectric conversion elements, and having color filters of plural colors formed on the semiconductor substrate and positioned in correspondence to the photoelectric conversion elements, a first visible-light transmissive layer formed between the semiconductor substrate and the color filters, and second visible-light transmissive layers each formed between adjacent color filters. The second visible-light transmissive layers include a same material as the first visible-light transmissive layer and are continuous with the first visible-light transmissive layer. The color filters having a largest area among the color filters of the plural colors each have an edge portion being continuous with an edge portion of a corresponding one of the second visible-light transmissive layers, and the color filters having the largest area each have a side wall on which a reaction product layer including a material forming the first visible-light transmissive layer is formed.

公开(公告)号：US20200258929A1

公开(公告)日：2020-08-13

申请号：US16861580

申请日：2020-04-29

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Tomohiro IMOTO ,  Satoshi TAKAHASHI

IPC: H01L27/146 ,  H01L21/311 ,  H04N9/04

Abstract: A solid-state imaging device including a semiconductor substrate having photoelectric conversion elements, a color filter layer having color filters of multiple colors, a partition wall, and a transparent resin layer. A thickness A of a color filter of a first color, a thickness B of the transparent resin layer, a thickness C of a color filter of a color other than the first color, a visible light transmittance D of the transparent resin layer, and a dimension E of the partition wall satisfy formulas (1) to (5): 200 nm≤A≤700 nm  (1); 0 nm

公开(公告)号：US20180261639A1

公开(公告)日：2018-09-13

申请号：US15977115

申请日：2018-05-11

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Satoshi TAKAHASHI ,  Tomohiro IMOTO

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  G02B5/20 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/31144 ,  H01L27/14 ,  H01L27/14685 ,  H04N9/07

Abstract: A method of producing a color filter includes applying, on a semiconductor substrate, a first color filter material including a first resin dispersion including a first pigment and a resin material, curing the first color filter material such that a first color filter film is formed and serves as a precursor of a first color filter including the first pigment, forming a photosensitive resin mask material layer on the first color filter film, forming openings by photolithography in portions of the photosensitive resin mask material layer such that second and subsequent color filters including pigments of colors different from the first pigment are to be formed in the openings, and that portions of the first color filter film are exposed by the openings, dry-etching the portions of the first color filter film by using a dry etching gas and the photosensitive resin mask material layer as an etching mask, removing the etching mask such that the first color filter is formed, and forming the second and subsequent color filters.