公开(公告)号：US20220107179A1

公开(公告)日：2022-04-07

申请号：US17552301

申请日：2021-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Shan HU ,  Dong GUI ,  Jang Jung LEE ,  Che-Liang LI ,  Duen-Huei HOU ,  Wen-Chung LIU

IPC: G01B21/30 ,  G01Q60/24

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

公开(公告)号：US20220059318A1

公开(公告)日：2022-02-24

申请号：US16997801

申请日：2020-08-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei HUNG ,  Jang Jung LEE

IPC: H01J37/285 ,  H01L21/66

Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

公开(公告)号：US20240395636A1

公开(公告)日：2024-11-28

申请号：US18789466

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei HUNG ,  Jang Jung LEE

IPC: H01L21/66 ,  H01J37/285 ,  H01L21/768 ,  H01L29/45

Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. A structure in a semiconductor device is identified as including a test object for an APT procedure. A target region is identified in the structure where an APT specimen will be obtained. The target region is analyzed to determine whether a challenging component feature exists therein. A challenging component may include a hard-to-evaporate material, a hollow region, or a material unidentifiable with respect to the test object, or other structural features that pose a challenge to a successful APT analysis. If it is determined that a challenging component exists in the target region, the challenging component is replaced with a more suitable material before the APT specimen is prepared.

公开(公告)号：US20230386783A1

公开(公告)日：2023-11-30

申请号：US18448014

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei HUNG ,  Jang Jung LEE

IPC: H01J37/285 ,  H01L21/66 ,  G01N1/32 ,  G01N1/28

CPC classification number: H01J37/285 ,  H01L22/12 ,  G01N1/32 ,  H01L22/30 ,  G01N1/286 ,  G01N2001/2873

Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

公开(公告)号：US20210343603A1

公开(公告)日：2021-11-04

申请号：US17374811

申请日：2021-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wei HUNG ,  Jang Jung LEE

IPC: H01L21/66 ,  H01L21/768 ,  H01J37/285 ,  H01L29/45

Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. A structure in a semiconductor device is identified as including a test object for an APT procedure. A target region is identified in the structure where an APT specimen will be obtained. The target region is analyzed to determine whether a challenging component feature exists therein. A challenging component may include a hard-to-evaporate material, a hollow region, or a material unidentifiable with respect to the test object, or other structural features that pose a challenge to a successful APT analysis. If it is determined that a challenging component exists in the target region, the challenging component is replaced with a more suitable material before the APT specimen is prepared.

公开(公告)号：US20200340807A1

公开(公告)日：2020-10-29

申请号：US16927906

申请日：2020-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Shan HU ,  Dong GUI ,  Jang Jung LEE ,  Che-Liang LI ,  Duen-Huei HOU ,  Wen-Chung LIU

IPC: G01B21/30 ,  G01Q60/24

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.