公开(公告)号：US20080182385A1

公开(公告)日：2008-07-31

申请号：US11971346

申请日：2008-01-09

Applicant: Tetsuji KAMINE

Inventor： Tetsuji KAMINE

IPC: H01L21/30

CPC classification number: H05K3/20 ,  G02F1/133351 ,  H01L21/6835 ,  H01L24/97 ,  H01L25/0655 ,  H01L51/003 ,  H01L51/5246 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2251/5338 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H05K2201/0317 ,  H05K2203/1147 ,  H05K2203/1476

Abstract: A method for producing a semiconductor device includes bonding a transfer layer disposed on a first substrate to a second substrate and detaching the transfer layer from the first substrate. In bonding the transfer layer disposed on the first substrate to the second substrate, the method further includes placing a seal having a frame shape on a surface of the first substrate on which the transfer layer is disposed or a surface of the second substrate facing the first substrate, placing an adhesive in a region inside the seal, and superposing the surface of the first substrate on which the transfer layer is disposed on the second substrate with the seal and the adhesive. The seal and the adhesive are incompatible with each other. The seal and the adhesive are not cured in the period from placing the seal to superposing the surface of the first substrate on which the transfer layer is disposed on the second substrate.

Abstract translation: 一种制造半导体器件的方法包括将设置在第一衬底上的转移层接合到第二衬底上，并将转移层与第一衬底分离。 在将设置在第一基板上的转印层接合到第二基板上时，该方法还包括将具有框架形状的密封件放置在其上设置有转印层的第一基板的表面上或者将第二基板的表面面向第一基板 衬底，将粘合剂放置在密封件内部的区域中，并且用密封件和粘合剂将其上设置有转印层的第一衬底的表面叠置在第二衬底上。 密封和粘合剂彼此不兼容。 密封件和粘合剂在将密封件放置在将第一基板的设置有转印层的表面叠置在第二基板上的期间不固化。