公开(公告)号：US20250113558A1

公开(公告)日：2025-04-03

申请号：US18374517

申请日：2023-09-28

Applicant: Texas Instruments Incorporated

Inventor： Gowrisankar Damarla ,  Robert Cassel ,  Zachary Katz ,  Ryan Rust

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming an integrated circuit includes forming a first trench that extends into the semiconductor substrate. A silicon nitride layer is deposited over the semiconductor substrate. The silicon nitride layer extends into the first trench. A second trench is formed that extends through the silicon nitride layer into the semiconductor substrate. The second trench is spaced apart from the first trench. An oxide layer is formed that fills the second trench. The silicon nitride layer outside the first trench is removed.

公开(公告)号：US20250040179A1

公开(公告)日：2025-01-30

申请号：US18361880

申请日：2023-07-30

Applicant: Texas Instruments Incorporated

Inventor： Pushpa Mahalingam ,  Alexei Sadovnikov ,  Nick Dunteman ,  Ryan Rust

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66

Abstract: Semiconductor devices including a high-k field relief dielectric structure are described. The microelectronic device comprises a substrate including a body region and a drain drift region on the substrate, a gate dielectric layer extending over the body region and the drift region, a drain drift trench is formed by removal of silicon dioxide from a LOCOS silicon region, a high-k field relief dielectric structure laterally abutting the gate dielectric layer at a location in the drift region, and a gate electrode on the gate dielectric layer and the field relief dielectric layer. Increasing the dielectric constant of the field relief dielectric structure may improve channel hot carrier performance, improve breakdown voltage, and reduce the specific on resistance. A drain drift trench formed in a trench left after removal of silicon dioxide in a LOCOS region provides improved trench depth uniformity.