LIQUID PHASE EPITAXY DOPING AND SILICON PN JUNCTION PHOTOVOLTAIC DEVICES

    公开(公告)号:US20180240671A1

    公开(公告)日:2018-08-23

    申请号:US15901363

    申请日:2018-02-21

    Abstract: A method for forming a doped silicon layer or a silicon alloy includes providing a silicon substrate having a silicon surface. An eutectic-former layer with dopant is formed on the silicon surface. Heating is conducted past a system eutectic temperature of the eutectic-former layer and silicon to form a liquid eutectic melt that incorporates some of the silicon near-surface into the liquid eutectic melt. Cooling to supersaturate the liquid eutectic melt with silicon and recrystallize silicon doped with the dopant. A silicon solar cell includes an emitter layer within a silicon substrate. A p-n junction is defined by a junction of the emitter layer with the remaining silicon substrate. The emitter has a doping profile with a doping concentration at the p-n junction that is equal or greater than the doping concentration at a surface of the emitter layer.

    WATER REFLECTION ANALYSIS OF ENCAPSULATED PHOTOVOLTAIC MODULES

    公开(公告)号:US20220200526A1

    公开(公告)日:2022-06-23

    申请号:US17604921

    申请日:2020-04-28

    Abstract: A method for moisture testing of a fully assembled photovoltaic (PV) module. An assembled PV module is probed with short wave IR probe energy in the range of 1700-2000 nm. Energy reflected from the assembled PV module is collected and directed to a sensor. Noise is removed from a signal of the sensor with reference to the probe energy. Absorption is of the probe energy is determined. The absorption is correlated to moisture in the PV module. A preferred system that carries out the method provides a signal-to-noise ratio (as defined by standard deviation/mean of measured reflectance) of at least 3800.

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