公开(公告)号：US06989581B2

公开(公告)日：2006-01-24

申请号：US10497814

申请日：2002-12-23

Applicant: Timothy Jonathan Phillips

Inventor： Timothy Jonathan Phillips

IPC: H01L27/082

CPC classification number: H01L29/66318 ,  H01L29/1004 ,  H01L29/7371

Abstract: A bipolar transistor with vertical geometry comprises a base region (1) provided with a base contact (21), emitter and collector regions (2,3) arranged to extract minority carriers from the base region, and an excluding structure for counteracting entry of minority carriers into the base region via the base contact, wherein the base region has a bandgap of greater than 0.5 eV and a doping level greater than 1017 cm−3. As shown the base includes an excluding heterojunction (4) preventing entry of carriers from the base contact (21), but alternatively the base region could comprise a “high-low” doping homojunction. The construction shows improved resistance to thermal runaway even in multi-finger transistors. It is particularly useful for high power, high frequency transistors, e.g. base on gallium indium arsenide. The collector region preferably has a heterostructure.

Abstract translation: 具有垂直几何形状的双极晶体管包括设置有基极触点（21）的基极区域（1），布置成从基极区域提取少数载流子的发射极和集电极区域（2,3），以及用于抵消少数进入的排除结构 载体经由基极接触进入基极区域，其中基极区域具有大于0.5eV的带隙和大于10μS-3的掺杂水平。 如图所示，底座包括防止载体从基极触点（21）进入的排除异质结（4），但是也可选择地，基极区域可以包括“高 - 低”掺杂均质结。 该结构即使在多指状晶体管中也显示出改善的耐热失控性。 它对于大功率高频晶体管是特别有用的。 基于砷化铟镓。 收集区优选具有异质结构。

公开(公告)号：US07173292B2

公开(公告)日：2007-02-06

申请号：US10508057

申请日：2003-03-17

Applicant: Timothy Jonathan Phillips

Inventor： Timothy Jonathan Phillips

IPC: H01L29/739

CPC classification number: H01L29/7783 ,  H01L29/1029

Abstract: In a field effect transistor having a quantum well is provided by a primary conduction channel, at least one secondary conduction channel immediately adjacent and in contact with the primary channel has an effect bandgap greater than the effective bandgap of the primary channel, and the modulus of the difference between the impact ionisation threshold IIT of the primary channel and the effective conduction band offset (the height of the step) between the primary and secondary channels being no more than 0.5 Eg (effective), or (alternatively) no more than 0.4 eV. Higher energy carriers which might otherwise cause impact ionization leading to runaway are thus diverted into the secondary channel allowing the device to run faster at increased voltages and/or to exhibit much greater resistance to runaway. The primary channel is prefereably of low bandgap material, for example InSb, InAs, InAs1-y, In1-xGaxAs.

Abstract translation: 在具有量子阱的场效应晶体管中，由主导通道提供，至少一个与主通道相邻并与主通道接触的次级导电通道具有大于主通道的有效带隙的效应带隙， 主通道的电离电离阈值IIT与初级和次级通道之间的有效导带偏移（台阶的高度）之间的差异不大于0.5Eg（有效），或者（不足0.4eV） 。 因此，否则可能导致撞击电离导致失控的较高能量载体因此被转移到次级通道中，允许装置在增加的电压下运行更快和/或表现出更大的抗失真性。 主要信道优选为低带隙材料，例如InSb，InAs，InAs 1-y，In 1-x Ga x As。

公开(公告)号：US5750050A

公开(公告)日：1998-05-12

申请号：US564211

申请日：1996-02-28

Applicant: John William Goodby ,  Michael Hird ,  David Richard Beattie ,  Paul Hindmarsh ,  George William Gray ,  Damien Gerard McDonnell ,  John Clifford Jones ,  Timothy Jonathan Phillips

Inventor： John William Goodby ,  Michael Hird ,  David Richard Beattie ,  Paul Hindmarsh ,  George William Gray ,  Damien Gerard McDonnell ,  John Clifford Jones ,  Timothy Jonathan Phillips

IPC: G02F1/13 ,  C07C43/20 ,  C07C43/205 ,  C07C43/215 ,  C07C43/225 ,  C07C69/00 ,  C07C69/76 ,  C07C69/773 ,  C07C69/92 ,  C07C255/54 ,  C07C255/55 ,  C07C255/57 ,  C09K19/32 ,  C09K19/52

CPC classification number: C07C69/92 ,  C07C43/20 ,  C09K19/32 ,  C07C2103/00 ,  C07C2103/42 ,  C09K2019/328 ,  Y10T428/10

Abstract: Liquid crystal compounds have been synthesized of general formula (I) and may be mixed with other liquid crystal compounds to give useful liquid crystal mixtures which may then be used in liquid crystal devices. Such devices include linear and non-linear electrical, optical and electro-optical devices, magneto-optical devices and devices providing responses to stimuli such as temperature changes and total or partial pressure changes. Formula (I) where each Z.sub.1-6 is given by formula (II), where Y for each of Z.sub.1-6 is independently COO, OCO, CH.sub.2 O and OCH.sub.2, m defines the number of substituents on each of Z.sub.1-6 and is independently 0-5,and X is independently for each substituent on each of Z.sub.1-6 alkyl (straight chain, branched and chiral), alkoxy (straight chain, branched or chiral), alkanoyl (straight chain, branched or chiral), alkenyl (straight chain, branched or chiral), halogen, halogenoalkyl (straight chain, branched or chiral) and CN, provided that at least one of Z.sub.-6 1 has at least one substituent X, and excluding where m is 1 for each of Z.sub.1-6, Y is COO for each of Z.sub.1-6 and X is n-alkyl or n-alkoxy positioned para to Y for each of Z.sub.1-6 and also where M is 5 for each of Z.sub.1-6, Y is COO for each of Z.sub.1-6 and for each Z.sub.1-6 X is selected as n-alkoxy positioned para to Y and fluoride for all other substituents.

Abstract translation: PCT No.PCT / GB93 / 01291 Sec。 371日期1996年2月28日 102（e）日期1996年2月28日PCT提交1993年6月16日PCT公布。 公开号WO94 / 29263 日本时间1994年12月22日<图像（I）<图像>（II）由通式（I）合成液晶化合物，可与其他液晶化合物混合，得到有用的液晶混合物，然后使用 在液晶装置中。 这样的器件包括线性和非线性电学，光学和电光器件，磁光器件和提供对诸如温度变化和全部或部分压力变化等刺激的响应的器件。 式（I）其中每个Z1-6由式（II）给出，其中Z1-6各自独立地为COO，OCO，CH2O和OCH2，m定义Z1-6各自的取代基数，独立地为 Z-6烷基（直链，支链和手性），烷氧基（直链，支链或手性），烷酰基（直链，支链或手性），烯基（直链） 链，支链或手性），卤素，卤代烷基（直链，支链或手性）和CN，条件是Z-61中的至少一个具有至少一个取代基X，并且除了Z1-6中的每一个之外，m为1， Y是Z1-6中的每一个的COO，X是Z1-6中每一个位于对Y的正烷基或n-烷氧基，并且对于Z1-6中的每一个，M为5，Y为Z 1 - 6并且对于每个Z1-6 X选择为位于Y对位的正烷氧基和所有其它取代基的氟化物。