公开(公告)号：US20230078946A1

公开(公告)日：2023-03-16

申请号：US17943729

申请日：2022-09-13

Applicant: Tokyo Electron Limited

Inventor： Steven Grzeskowiak ,  Lior Huli ,  Angelique Raley ,  Cong Que Dinh ,  Makoto Muramatsu ,  Seiji Nagahara

IPC: G03F7/36 ,  H01L21/66 ,  H01L21/027 ,  G03F7/38 ,  G03F7/40 ,  G03F7/42

Abstract: A method of microfabrication includes depositing a photoresist film on a working surface of a semiconductor wafer, the photoresist film being sensitive to extreme ultraviolet radiation; exposing the photoresist film to a pattern of extreme ultraviolet radiation; performing a hybrid develop of the photoresist film. The hybrid develop includes executing a first development process to remove a first portion of the photoresist film; stopping the development of the photoresist film after the first development process, the photo resist film including a structure having a first critical dimension larger than a target critical dimension after the stopping; and after stopping the development, executing a second development process to remove a second portion of the photoresist film and shrinking the critical dimension of the structure from the first critical dimension to a second critical dimension that is less than the first critical dimension.