公开(公告)号：US20210048749A1

公开(公告)日：2021-02-18

申请号：US16993594

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Seiji Nagahara ,  Congque Dinh ,  Mark Somervell

IPC: G03F7/20

Abstract: Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

公开(公告)号：US11163236B2

公开(公告)日：2021-11-02

申请号：US16993594

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Seiji Nagahara ,  Congque Dinh ,  Mark Somervell

IPC: G03F7/20

Abstract: Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.