公开(公告)号：US20250154645A1

公开(公告)日：2025-05-15

申请号：US18838661

申请日：2023-02-06

Applicant: Tokyo Electron Limited

Inventor： Tadashi MITSUNARI ,  Hiroki ARAI ,  Yuutaro KISHI ,  Yasuhiro HAMADA

IPC: C23C16/26 ,  C23C16/509 ,  H01J37/32 ,  H01L21/02

Abstract: A film forming method includes placing a substrate on a substrate placement stage provided inside a processing container, exhausting and depressurizing an inside of the processing container, forming a carbon film on the substrate by generating plasma through application of radio frequency power for plasma generation to the substrate placement stage while supplying a process gas including a carbon-containing gas into the depressurized processing container, and performing plasma processing by applying a negative direct current voltage to a counter electrode facing the substrate placement stage, along with application of the radio frequency power for plasma generation to the substrate placement stage.

公开(公告)号：US20240258086A1

公开(公告)日：2024-08-01

申请号：US18565489

申请日：2022-05-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi MITSUNARI ,  Hiroki ARAI

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/44 ,  C23C16/503 ,  C23C16/509 ,  C23C16/515 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32834 ,  C23C16/26 ,  C23C16/4408 ,  C23C16/503 ,  C23C16/509 ,  C23C16/515 ,  C23C16/52 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/3321 ,  H01L21/02115 ,  H01L21/02274

Abstract: A film formation method comprising: placing a substrate on a substrate table provided in a treatment container, discharging air inside the treatment container to reduce pressure therein; producing plasma by applying a combination of a high-frequency power and a direct-current pulsed voltage to the substrate table while supplying a treatment gas containing a carbon-containing gas into the pressure-reduced treatment container, to form a carbon film on the substrate.

公开(公告)号：US20240044006A1

公开(公告)日：2024-02-08

申请号：US18267596

申请日：2021-12-07

Applicant: Tokyo Electron Limited

Inventor： Hiroki ARAI ,  Tadashi MITSUNARI

IPC: C23C16/56 ,  H01J37/32 ,  C23C16/26

CPC classification number: C23C16/56 ,  H01J37/32449 ,  H01J37/32091 ,  H01J37/32568 ,  C23C16/26 ,  H01J2237/3321 ,  H01J37/32834

Abstract: A substrate processing method includes forming a carbon film on a substrate by plasma CVD using a processing gas including a carbon-containing gas; and performing a plasma post-processing on the formed carbon film, thereby reducing film stress of the carbon film by plasma of the processing gas including helium gas or a mixture of helium gas and argon gas but not including hydrogen.

公开(公告)号：US20230124217A1

公开(公告)日：2023-04-20

申请号：US17969603

申请日：2022-10-19

Applicant: Tokyo Electron Limited

Inventor： Takahiro SHINDO ,  Hiroki ARAI

IPC: H01J37/32

Abstract: A plasma processing apparatus comprising: a chamber; a lower electrode provided in the chamber and included in a substrate support mounts a substrate thereon; an upper electrode provided in the chamber and disposed to face the lower electrode; a gas supply configured to supply a processing gas between the upper electrode and the lower electrode; a high-frequency power supply electrically connected to the upper electrode and configured to generate a plasma of the processing gas by applying a high-frequency voltage to the upper electrode; and a circuit portion electrically connected between the high-frequency power supply and the lower electrode and provides a potential to the lower electrode. The circuit portion provides the potential to the lower electrode by causing a current to flow from the high-frequency power supply toward the lower electrode when a potential of the high-frequency power supply is higher than a potential of the lower electrode.